Deuterium retention in Si doped carbon films

E. Vainonen-Ahlgren, T. Sajavaara, W. Rydman, T. Ahlgren, J. Nordlund, J. Keinonen, Jari Likonen, Sari Lehto, C. Wu

    Research output: Chapter in Book/Report/Conference proceedingChapter or book articleScientificpeer-review

    Abstract

    Deuterium retention, solubility and out-diffusion have been studied in silicon doped films produced by physical vapor deposition. The deuterium concentration profiles were measured by the time-of-flight elastic recoil detection analysis technique and secondary ion massa spectrometry. The D retention and solubility were measured in D implanted carbon samples. The out-diffusion of D was investigated in D co-deposit samples. The solubility of D was shown to increase as a function of Si concentration in the co-deposited samples while in the implanted samples no dependence of the Si content was observed. It was proposed that annealing behavior of deuterium has a trapping-like character.
    Original languageEnglish
    Title of host publicationHydrogen Recycling at Plasma Facing Materials
    EditorsC. H. Wu
    PublisherSpringer
    Pages281-287
    ISBN (Electronic)978-94-011-4331-8
    ISBN (Print)978-0-7923-6630-0
    Publication statusPublished - 2000
    MoE publication typeNot Eligible

    Publication series

    SeriesNATO Science Series II: Mathematics, Physics and Chemistry
    Volume1
    ISSN1568-2609

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  • Cite this

    Vainonen-Ahlgren, E., Sajavaara, T., Rydman, W., Ahlgren, T., Nordlund, J., Keinonen, J., Likonen, J., Lehto, S., & Wu, C. (2000). Deuterium retention in Si doped carbon films. In C. H. Wu (Ed.), Hydrogen Recycling at Plasma Facing Materials (pp. 281-287). Springer. NATO Science Series II: Mathematics, Physics and Chemistry, Vol.. 1 http://10.1007/978-94-011-4331-8