Deuterium retention, solubility and out-diffusion have been studied in silicon doped films produced by physical vapor deposition. The deuterium concentration profiles were measured by the time-of-flight elastic recoil detection analysis technique and secondary ion massa spectrometry. The D retention and solubility were measured in D implanted carbon samples. The out-diffusion of D was investigated in D co-deposit samples. The solubility of D was shown to increase as a function of Si concentration in the co-deposited samples while in the implanted samples no dependence of the Si content was observed. It was proposed that annealing behavior of deuterium has a trapping-like character.
|Title of host publication||Hydrogen Recycling at Plasma Facing Materials|
|Editors||C. H. Wu|
|Publication status||Published - 2000|
|MoE publication type||Not Eligible|
|Series||NATO Science Series II: Mathematics, Physics and Chemistry|
Vainonen-Ahlgren, E., Sajavaara, T., Rydman, W., Ahlgren, T., Nordlund, J., Keinonen, J., Likonen, J., Lehto, S., & Wu, C. (2000). Deuterium retention in Si doped carbon films. In C. H. Wu (Ed.), Hydrogen Recycling at Plasma Facing Materials (pp. 281-287). Springer. NATO Science Series II: Mathematics, Physics and Chemistry, Vol.. 1 http://10.1007/978-94-011-4331-8