TY - JOUR
T1 - Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology
AU - Barraud, Sylvain
AU - Lavieville, Romain
AU - Hutin, Louis
AU - Bohuslavskyi, Heorhii
AU - Vinet, Maud
AU - Corna, Andrea
AU - Clapera, Paul
AU - Sanquer, Marc
AU - Jehl, Xavier
PY - 2016/3/11
Y1 - 2016/3/11
N2 - The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor) research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.
AB - The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor) research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.
U2 - 10.3390/technologies4010010
DO - 10.3390/technologies4010010
M3 - Article
SN - 2227-7080
VL - 4
JO - Technologies
JF - Technologies
IS - 1
M1 - 10
ER -