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Development of radiation tolerant semiconductor detectors for the Super-LHC

  • European Organization for Nuclear Research (CERN)
  • University of Exeter
  • University of Glasgow
  • University of Oslo
  • University of Liverpool
  • Syracuse University
  • Catholic University of Louvain
  • SINTEF Digital
  • Institute for Nuclear Research of NAS of Ukraine
  • Polish Academy of Sciences
  • University of Perugia
  • Istituto Nazionale di Fisica Nucleare (INFN)
  • University of Rochester
  • Purdue University West Lafayette
  • Institute for Theoretical and Experimental Physics (ITEP)
  • Università degli Studi di Firenze
  • University of Pisa (UNIPI)
  • ITC-IRST
  • University of Trieste (UNITS)
  • Lancaster University
  • Charles University
  • Lukasiewicz Institute of Microelectronics and Photonics (Łukasiewicz-IMIF)
  • Institut de Physique des Materiaux, Bucarest-Magurele
  • Hamburg University of Technology
  • Centro Nacional de Microelectrónica (IMB-CNM)
  • University of Bologna
  • Université de Montréal
  • Czech Technical University (CTU)
  • University of Ljubljana
  • Fermi National Accelerator Laboratory
  • University of Sheffield
  • Helsinki Institute of Physics (HIP)

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm-2 s-1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.

Original languageEnglish
Pages (from-to)99-107
Number of pages9
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume546
Issue number1-2
DOIs
Publication statusPublished - 1 Jul 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • Defect engineering
  • Radiation damage
  • Semiconductor detectors
  • Silicon particle detectors
  • SLHC
  • Super-LHC

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