Development of silicon-on-insulator waveguide technology

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

8 Citations (Scopus)

Abstract

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 µm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples
Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies VIII
EditorsYakov Sidorin, Ari Tervonen
PublisherInternational Society for Optics and Photonics SPIE
Pages81-95
ISBN (Print)0-8194-5263-7
DOIs
Publication statusPublished - 2004
MoE publication typeA4 Article in a conference publication
EventIntegrated Optoelectronic Devices 2004 - San Jose, United States
Duration: 26 Jan 200429 Jan 2004

Publication series

SeriesProceedings of SPIE
Volume5355
ISSN0277-786X

Conference

ConferenceIntegrated Optoelectronic Devices 2004
CountryUnited States
CitySan Jose
Period26/01/0429/01/04

Fingerprint

insulators
waveguides
silicon
ridges
birefringence
slabs
switches
propagation
simulation

Keywords

  • silicon-on-insulator
  • SOI
  • waveguide
  • ridge waveguide
  • thermo-optical switch
  • polarization
  • polarization extinction ratio
  • birefringence

Cite this

Aalto, T., Harjanne, M., Kapulainen, M., Heimala, P., & Leppihalme, M. (2004). Development of silicon-on-insulator waveguide technology. In Y. Sidorin, & A. Tervonen (Eds.), Integrated Optics: Devices, Materials, and Technologies VIII (pp. 81-95). International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 5355 https://doi.org/10.1117/12.537540
Aalto, Timo ; Harjanne, Mikko ; Kapulainen, Markku ; Heimala, Päivi ; Leppihalme, Matti. / Development of silicon-on-insulator waveguide technology. Integrated Optics: Devices, Materials, and Technologies VIII. editor / Yakov Sidorin ; Ari Tervonen. International Society for Optics and Photonics SPIE, 2004. pp. 81-95 (Proceedings of SPIE, Vol. 5355).
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abstract = "An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 µm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples",
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Aalto, T, Harjanne, M, Kapulainen, M, Heimala, P & Leppihalme, M 2004, Development of silicon-on-insulator waveguide technology. in Y Sidorin & A Tervonen (eds), Integrated Optics: Devices, Materials, and Technologies VIII. International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 5355, pp. 81-95, Integrated Optoelectronic Devices 2004, San Jose, United States, 26/01/04. https://doi.org/10.1117/12.537540

Development of silicon-on-insulator waveguide technology. / Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Heimala, Päivi; Leppihalme, Matti.

Integrated Optics: Devices, Materials, and Technologies VIII. ed. / Yakov Sidorin; Ari Tervonen. International Society for Optics and Photonics SPIE, 2004. p. 81-95 (Proceedings of SPIE, Vol. 5355).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AB - An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 µm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples

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Aalto T, Harjanne M, Kapulainen M, Heimala P, Leppihalme M. Development of silicon-on-insulator waveguide technology. In Sidorin Y, Tervonen A, editors, Integrated Optics: Devices, Materials, and Technologies VIII. International Society for Optics and Photonics SPIE. 2004. p. 81-95. (Proceedings of SPIE, Vol. 5355). https://doi.org/10.1117/12.537540