Development of silicon-on-insulator waveguide technology

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    10 Citations (Scopus)


    An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 µm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples
    Original languageEnglish
    Title of host publicationIntegrated Optics
    Subtitle of host publicationDevices, Materials, and Technologies VIII
    EditorsYakov Sidorin, Ari Tervonen
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)0-8194-5263-7
    Publication statusPublished - 2004
    MoE publication typeA4 Article in a conference publication
    EventIntegrated Optoelectronic Devices 2004: Photonics Packaging and Integration IV - San Jose, United States
    Duration: 26 Jan 200429 Jan 2004

    Publication series

    SeriesProceedings of SPIE


    ConferenceIntegrated Optoelectronic Devices 2004
    Country/TerritoryUnited States
    CitySan Jose


    • silicon-on-insulator
    • SOI
    • waveguide
    • ridge waveguide
    • thermo-optical switch
    • polarization
    • polarization extinction ratio
    • birefringence


    Dive into the research topics of 'Development of silicon-on-insulator waveguide technology'. Together they form a unique fingerprint.

    Cite this