We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.
|Title of host publication||2004 IEEE International SOI Conference|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 2004|
|MoE publication type||A4 Article in a conference publication|