We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.
|Title of host publication||2004 IEEE International SOI Conference|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 2004|
|MoE publication type||A4 Article in a conference publication|
Gamiz, F., Sampedro, C., Godoyand, A., Prunnila, M., & Ahopelto, J. (2004). DGSOI devices operated as velocity modulation transistors. In 2004 IEEE International SOI Conference  IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/SOI.2004.1391614