DGSOI devices operated as velocity modulation transistors

F. Gamiz, C. Sampedro, A. Godoyand, Mika Prunnila, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)

Abstract

We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.
Original languageEnglish
Title of host publication2004 IEEE International SOI Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)0-7803-8497-0
DOIs
Publication statusPublished - 2004
MoE publication typeA4 Article in a conference publication

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velocity modulation
transistors
insulators
silicon
room temperature

Cite this

Gamiz, F., Sampedro, C., Godoyand, A., Prunnila, M., & Ahopelto, J. (2004). DGSOI devices operated as velocity modulation transistors. In 2004 IEEE International SOI Conference [198] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/SOI.2004.1391614
Gamiz, F. ; Sampedro, C. ; Godoyand, A. ; Prunnila, Mika ; Ahopelto, Jouni. / DGSOI devices operated as velocity modulation transistors. 2004 IEEE International SOI Conference. IEEE Institute of Electrical and Electronic Engineers , 2004.
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title = "DGSOI devices operated as velocity modulation transistors",
abstract = "We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.",
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Gamiz, F, Sampedro, C, Godoyand, A, Prunnila, M & Ahopelto, J 2004, DGSOI devices operated as velocity modulation transistors. in 2004 IEEE International SOI Conference., 198, IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/SOI.2004.1391614

DGSOI devices operated as velocity modulation transistors. / Gamiz, F.; Sampedro, C.; Godoyand, A.; Prunnila, Mika; Ahopelto, Jouni.

2004 IEEE International SOI Conference. IEEE Institute of Electrical and Electronic Engineers , 2004. 198.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - DGSOI devices operated as velocity modulation transistors

AU - Gamiz, F.

AU - Sampedro, C.

AU - Godoyand, A.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2004

Y1 - 2004

N2 - We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.

AB - We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.

U2 - 10.1109/SOI.2004.1391614

DO - 10.1109/SOI.2004.1391614

M3 - Conference article in proceedings

SN - 0-7803-8497-0

BT - 2004 IEEE International SOI Conference

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Gamiz F, Sampedro C, Godoyand A, Prunnila M, Ahopelto J. DGSOI devices operated as velocity modulation transistors. In 2004 IEEE International SOI Conference. IEEE Institute of Electrical and Electronic Engineers . 2004. 198 https://doi.org/10.1109/SOI.2004.1391614