DGSOI devices operated as velocity modulation transistors

F. Gamiz, C. Sampedro, A. Godoyand, Mika Prunnila, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)

Abstract

We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.
Original languageEnglish
Title of host publication2004 IEEE International SOI Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)0-7803-8497-0
DOIs
Publication statusPublished - 2004
MoE publication typeA4 Article in a conference publication

Fingerprint Dive into the research topics of 'DGSOI devices operated as velocity modulation transistors'. Together they form a unique fingerprint.

Cite this