DGSOI devices operated as velocity modulation transistors

F. Gamiz; C. Sampedro; A. Godoyand; Mika Prunnila; Jouni Ahopelto

doi:10.1109/SOI.2004.1391614

DGSOI devices operated as velocity modulation transistors

F. Gamiz, C. Sampedro, A. Godoyand, Mika Prunnila, Jouni Ahopelto

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.

Original language	English
Title of host publication	2004 IEEE International SOI Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Print)	0-7803-8497-0
DOIs	https://doi.org/10.1109/SOI.2004.1391614
Publication status	Published - 2004
MoE publication type	A4 Article in a conference publication

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10.1109/SOI.2004.1391614

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title = "DGSOI devices operated as velocity modulation transistors",

abstract = "We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.",

author = "F. Gamiz and C. Sampedro and A. Godoyand and Mika Prunnila and Jouni Ahopelto",

year = "2004",

doi = "10.1109/SOI.2004.1391614",

language = "English",

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booktitle = "2004 IEEE International SOI Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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TY - GEN

T1 - DGSOI devices operated as velocity modulation transistors

AU - Gamiz, F.

AU - Sampedro, C.

AU - Godoyand, A.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2004

Y1 - 2004

N2 - We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.

AB - We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable I/sub on//I/sub off/ ratios even at room temperature.

U2 - 10.1109/SOI.2004.1391614

DO - 10.1109/SOI.2004.1391614

M3 - Conference article in proceedings

SN - 0-7803-8497-0

BT - 2004 IEEE International SOI Conference

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

DGSOI devices operated as velocity modulation transistors

Abstract

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