Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

Y. Ezer, J. Härkönen, S. Arpiainen, V. Sokolov, P. Kuivalainen, J. Saarilahti, J. Kaitila

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

Original languageEnglish
Title of host publicationProceedings of the 18th Nordic Semiconductor Meeting
PublisherInstitute of Physics IOP
Pages228-231
Number of pages4
Volume79
DOIs
Publication statusPublished - 1 Dec 1999
MoE publication typeA4 Article in a conference publication
Event18th Nordic Semiconductor Meeting , 18NSM - Linköping, Sweden
Duration: 8 Jun 199810 Jun 1998

Conference

Conference18th Nordic Semiconductor Meeting , 18NSM
CountrySweden
CityLinköping
Period8/06/9810/06/98

Fingerprint

adhesion tests
thin films
laminates
Auger spectroscopy
electron spectroscopy
Spectroscopy
backscattering
thermal stability
annealing
Thermal Stability
Backscattering
Adhesion
Annealing
diffraction
X-ray Diffraction
spectroscopy
Migration
Multilayer
x rays
Electron

Cite this

Ezer, Y., Härkönen, J., Arpiainen, S., Sokolov, V., Kuivalainen, P., Saarilahti, J., & Kaitila, J. (1999). Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. In Proceedings of the 18th Nordic Semiconductor Meeting (Vol. 79, pp. 228-231). Institute of Physics IOP. Physica Scripta: Topical Issues, Vol.. 79 https://doi.org/10.1238/Physica.Topical.079a00228
Ezer, Y. ; Härkönen, J. ; Arpiainen, S. ; Sokolov, V. ; Kuivalainen, P. ; Saarilahti, J. ; Kaitila, J. / Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. Proceedings of the 18th Nordic Semiconductor Meeting. Vol. 79 Institute of Physics IOP, 1999. pp. 228-231 (Physica Scripta: Topical Issues, Vol. 79).
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abstract = "We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.",
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Ezer, Y, Härkönen, J, Arpiainen, S, Sokolov, V, Kuivalainen, P, Saarilahti, J & Kaitila, J 1999, Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. in Proceedings of the 18th Nordic Semiconductor Meeting. vol. 79, Institute of Physics IOP, Physica Scripta: Topical Issues, vol. 79, pp. 228-231, 18th Nordic Semiconductor Meeting , 18NSM, Linköping, Sweden, 8/06/98. https://doi.org/10.1238/Physica.Topical.079a00228

Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. / Ezer, Y.; Härkönen, J.; Arpiainen, S.; Sokolov, V.; Kuivalainen, P.; Saarilahti, J.; Kaitila, J.

Proceedings of the 18th Nordic Semiconductor Meeting. Vol. 79 Institute of Physics IOP, 1999. p. 228-231 (Physica Scripta: Topical Issues, Vol. 79).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Ezer, Y.

AU - Härkönen, J.

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AU - Sokolov, V.

AU - Kuivalainen, P.

AU - Saarilahti, J.

AU - Kaitila, J.

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N2 - We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

AB - We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

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Ezer Y, Härkönen J, Arpiainen S, Sokolov V, Kuivalainen P, Saarilahti J et al. Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. In Proceedings of the 18th Nordic Semiconductor Meeting. Vol. 79. Institute of Physics IOP. 1999. p. 228-231. (Physica Scripta: Topical Issues, Vol. 79). https://doi.org/10.1238/Physica.Topical.079a00228