Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

Y. Ezer, J. Härkönen, S. Arpiainen, V. Sokolov, P. Kuivalainen, J. Saarilahti, J. Kaitila

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    4 Citations (Scopus)


    We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

    Original languageEnglish
    Title of host publicationProceedings of the 18th Nordic Semiconductor Meeting
    PublisherInstitute of Physics IOP
    Number of pages4
    Publication statusPublished - 1 Dec 1999
    MoE publication typeA4 Article in a conference publication
    Event18th Nordic Semiconductor Meeting, NSM18 - Linköping, Sweden
    Duration: 8 Jun 199810 Jun 1998

    Publication series

    SeriesPhysica Scripta: Topical Issues


    Conference18th Nordic Semiconductor Meeting, NSM18


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