Abstract
The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C.
However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
| Original language | English |
|---|---|
| Pages (from-to) | 1331-1337 |
| Journal | Materials Research Bulletin |
| Volume | 33 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1998 |
| MoE publication type | A1 Journal article-refereed |
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Ezer, Y., Härkönen, J., Sokolov, V., Saarilahti, J., Kaitila, J., & Kuivalainen, P. (1998). Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure. Materials Research Bulletin, 33(9), 1331-1337. https://doi.org/10.1016/S0025-5408(98)00117-2