Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

Yossef Ezer (Corresponding Author), Jaakko Härkönen, Vadim Sokolov, Jaakko Saarilahti, Jyrki Kaitila, Pekka Kuivalainen

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Abstract

The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C.
However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
Original languageEnglish
Pages (from-to)1331-1337
JournalMaterials Research Bulletin
Volume33
Issue number9
DOIs
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

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Deep level transient spectroscopy
Diffusion barriers
Thin films
Sheet resistance
Rutherford backscattering spectroscopy
thin films
X ray diffraction analysis
spectroscopy
adhesion tests
Multilayers
Thermodynamic stability
Adhesion
Annealing
laminates
backscattering
thermal stability
annealing
diffraction
x rays

Cite this

Ezer, Yossef ; Härkönen, Jaakko ; Sokolov, Vadim ; Saarilahti, Jaakko ; Kaitila, Jyrki ; Kuivalainen, Pekka. / Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure. In: Materials Research Bulletin. 1998 ; Vol. 33, No. 9. pp. 1331-1337.
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title = "Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure",
abstract = "The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.",
author = "Yossef Ezer and Jaakko H{\"a}rk{\"o}nen and Vadim Sokolov and Jaakko Saarilahti and Jyrki Kaitila and Pekka Kuivalainen",
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doi = "10.1016/S0025-5408(98)00117-2",
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Ezer, Y, Härkönen, J, Sokolov, V, Saarilahti, J, Kaitila, J & Kuivalainen, P 1998, 'Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure', Materials Research Bulletin, vol. 33, no. 9, pp. 1331-1337. https://doi.org/10.1016/S0025-5408(98)00117-2

Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure. / Ezer, Yossef (Corresponding Author); Härkönen, Jaakko; Sokolov, Vadim; Saarilahti, Jaakko; Kaitila, Jyrki; Kuivalainen, Pekka.

In: Materials Research Bulletin, Vol. 33, No. 9, 1998, p. 1331-1337.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

AU - Ezer, Yossef

AU - Härkönen, Jaakko

AU - Sokolov, Vadim

AU - Saarilahti, Jaakko

AU - Kaitila, Jyrki

AU - Kuivalainen, Pekka

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AB - The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.

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