Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

Yossef Ezer; Jaakko Härkönen; Vadim Sokolov; Jaakko Saarilahti; Jyrki Kaitila; Pekka Kuivalainen

doi:10.1016/S0025-5408(98)00117-2

Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

Yossef Ezer (Corresponding Author), Jaakko Härkönen, Vadim Sokolov, Jaakko Saarilahti, Jyrki Kaitila, Pekka Kuivalainen

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Abstract

The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C.
However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.

Original language	English
Pages (from-to)	1331-1337
Journal	Materials Research Bulletin
Volume	33
Issue number	9
DOIs	https://doi.org/10.1016/S0025-5408(98)00117-2
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed

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Ezer, Y., Härkönen, J., Sokolov, V., Saarilahti, J., Kaitila, J., & Kuivalainen, P. (1998). Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure. Materials Research Bulletin, 33(9), 1331-1337. https://doi.org/10.1016/S0025-5408(98)00117-2

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title = "Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure",

abstract = "The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.",

author = "Yossef Ezer and Jaakko H{\"a}rk{\"o}nen and Vadim Sokolov and Jaakko Saarilahti and Jyrki Kaitila and Pekka Kuivalainen",

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T1 - Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

AU - Ezer, Yossef

AU - Härkönen, Jaakko

AU - Sokolov, Vadim

AU - Saarilahti, Jaakko

AU - Kaitila, Jyrki

AU - Kuivalainen, Pekka

PY - 1998

Y1 - 1998

N2 - The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.

AB - The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.

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DO - 10.1016/S0025-5408(98)00117-2

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JO - Materials Research Bulletin

JF - Materials Research Bulletin

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10.1016/S0025-5408(98)00117-2