TY - JOUR
T1 - Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure
AU - Ezer, Yossef
AU - Härkönen, Jaakko
AU - Sokolov, Vadim
AU - Saarilahti, Jaakko
AU - Kaitila, Jyrki
AU - Kuivalainen, Pekka
PY - 1998
Y1 - 1998
N2 - The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
AB - The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C. However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
U2 - 10.1016/S0025-5408(98)00117-2
DO - 10.1016/S0025-5408(98)00117-2
M3 - Article
SN - 0025-5408
VL - 33
SP - 1331
EP - 1337
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 9
ER -