Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

Yossef Ezer (Corresponding Author), Jaakko Härkönen, Vadim Sokolov, Jaakko Saarilahti, Jyrki Kaitila, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    24 Citations (Scopus)


    The Cu/Cr/Si structure was studied for thermal stability using thin Cr layers as a barrier in the range of 10 to 40 nm, between 250 and 500°C for 30 min. Investigations using sheet resistance method, deep level transient spectroscopy (DLTS), X-ray diffraction (XRD) analysis, Rutherford backscattering spectroscopy (RBS), and adhesion tests were carried out, to reveal the behavior of Cu and Cr in the Cu/Cr/Si structures. It is shown that even a 10-nm thin Cr layer preserves the multilayer structure up to 400°C and that Cu silicide formation is observed only after annealing at 450°C.
    However, as found by DLTS, compared with the conventional characterization techniques, Cu migration into the structure reduces the effectiveness of the Cr layers as a diffusion barrier at 50°C.
    Original languageEnglish
    Pages (from-to)1331-1337
    JournalMaterials Research Bulletin
    Issue number9
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed


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