Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

Y. Ezer; J. Härkönen; S. Arpiainen; V. Sokolov; P. Kuivalainen; J. Saarilahti; J. Kaitila

doi:10.1238/Physica.Topical.079a00228

Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

Y. Ezer^*
, J. Härkönen
, S. Arpiainen
, V. Sokolov
, P. Kuivalainen
, J. Saarilahti
, J. Kaitila

^*Corresponding author for this work

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

Original language	English
Title of host publication	Proceedings of the 18th Nordic Semiconductor Meeting
Publisher	Institute of Physics IOP
Pages	228-231
Number of pages	4
Volume	79
DOIs	https://doi.org/10.1238/Physica.Topical.079a00228
Publication status	Published - 1 Dec 1999
MoE publication type	A4 Article in a conference publication
Event	18th Nordic Semiconductor Meeting, NSM18 - Linköping, Sweden Duration: 8 Jun 1998 → 10 Jun 1998

Publication series

Series	Physica Scripta: Topical Issues
Volume	79
ISSN	0281-1847

Conference

Conference	18th Nordic Semiconductor Meeting, NSM18
Country/Territory	Sweden
City	Linköping
Period	8/06/98 → 10/06/98

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SDG 3 Good Health and Well-being

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10.1238/Physica.Topical.079a00228

Cite this

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title = "Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure",

abstract = "We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.",

author = "Y. Ezer and J. H{\"a}rk{\"o}nen and S. Arpiainen and V. Sokolov and P. Kuivalainen and J. Saarilahti and J. Kaitila",

year = "1999",

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Ezer, Y, Härkönen, J, Arpiainen, S, Sokolov, V, Kuivalainen, P, Saarilahti, J & Kaitila, J 1999, Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. in Proceedings of the 18th Nordic Semiconductor Meeting. vol. 79, Institute of Physics IOP, Physica Scripta: Topical Issues, vol. 79, pp. 228-231, 18th Nordic Semiconductor Meeting, NSM18, Linköping, Sweden, 8/06/98. https://doi.org/10.1238/Physica.Topical.079a00228

Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure. / Ezer, Y.; Härkönen, J.; Arpiainen, S. et al.
Proceedings of the 18th Nordic Semiconductor Meeting. Vol. 79 Institute of Physics IOP, 1999. p. 228-231 (Physica Scripta: Topical Issues, Vol. 79).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

AU - Ezer, Y.

AU - Härkönen, J.

AU - Arpiainen, S.

AU - Sokolov, V.

AU - Kuivalainen, P.

AU - Saarilahti, J.

AU - Kaitila, J.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

AB - We have studied the thermal stability of thin (from 10 to 40 nm) sputter deposited Cr layers as a diffusion barrier in Cu/Cr/Si structure. Sheet resistance measurements, DLTS, X-Ray Diffraction analysis (XRD), Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and adhesion tests were carried out in order to reveal the behaviour of Cu and Cr in the Cu/Cr/Si structures. It is shown that even the 10 nm thin Cr layer preserves the multilayer structure up to 400°C, and Cu suicide formation is observed only after annealing at 450°C for 30 min. DLTS measurements revealed the Cu migration into the structure at lower temperatures (in this case at 350°C) than the other characterization techniques.

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VL - 79

T3 - Physica Scripta: Topical Issues

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EP - 231

BT - Proceedings of the 18th Nordic Semiconductor Meeting

PB - Institute of Physics IOP

T2 - 18th Nordic Semiconductor Meeting, NSM18

Y2 - 8 June 1998 through 10 June 1998

ER -

Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure

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