Abstract
Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.
Original language | English |
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Title of host publication | 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 117-118 |
ISBN (Electronic) | 978-1-4799-8379-7 |
DOIs | |
Publication status | Published - 10 May 2015 |
MoE publication type | A4 Article in a conference publication |
Event | 15th International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Province of China Duration: 7 Sept 2015 → 11 Sept 2015 Conference number: 15 |
Conference
Conference | 15th International Conference on Numerical Simulation of Optoelectronic Devices |
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Abbreviated title | NUSOD |
Country/Territory | Taiwan, Province of China |
City | Taipei |
Period | 7/09/15 → 11/09/15 |
Keywords
- Charge carrier processes
- Doping
- Electric potential
- Gallium nitride
- Nanostructures
- Optimization
- Semiconductor process modeling