Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari, Lauri Riuttanen, Sami Suihkonen, Jani Oksanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.
Original languageEnglish
Title of host publication2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages117-118
ISBN (Electronic)978-1-4799-8379-7
DOIs
Publication statusPublished - 10 May 2015
MoE publication typeA4 Article in a conference publication
Event15th International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Province of China
Duration: 7 Sept 201511 Sept 2015
Conference number: 15

Conference

Conference15th International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
Country/TerritoryTaiwan, Province of China
CityTaipei
Period7/09/1511/09/15

Keywords

  • Charge carrier processes
  • Doping
  • Electric potential
  • Gallium nitride
  • Nanostructures
  • Optimization
  • Semiconductor process modeling

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