Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari; Lauri Riuttanen; Sami Suihkonen; Jani Oksanen

doi:10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari
, Lauri Riuttanen
, Sami Suihkonen
, Jani Oksanen

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

Original language	English
Title of host publication	2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	117-118
ISBN (Electronic)	978-1-4799-8379-7
DOIs	https://doi.org/10.1109/NUSOD.2015.7292850
Publication status	Published - 10 May 2015
MoE publication type	A4 Article in a conference publication
Event	15th International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Province of China Duration: 7 Sept 2015 → 11 Sept 2015 Conference number: 15

Conference

Conference	15th International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Taiwan, Province of China
City	Taipei
Period	7/09/15 → 11/09/15

Keywords

Charge carrier processes
Doping
Electric potential
Gallium nitride
Nanostructures
Optimization
Semiconductor process modeling

Access to Document

10.1109/NUSOD.2015.7292850

http://www.scopus.com/inward/record.url?scp=84959189149&partnerID=8YFLogxK

Cite this

@inproceedings{1d35b1c543884551a36e31f4c5ad3979,

title = "Diffusion-driven current transport to near-surface nanostructures",

abstract = "Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.",

keywords = "Charge carrier processes, Doping, Electric potential, Gallium nitride, Nanostructures, Optimization, Semiconductor process modeling",

author = "Pyry Kivisaari and Lauri Riuttanen and Sami Suihkonen and Jani Oksanen",

note = "Conference code: 15; 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 07-09-2015 Through 11-09-2015",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292850",

language = "English",

pages = "117--118",

booktitle = "2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Kivisaari, P, Riuttanen, L, Suihkonen, S & Oksanen, J 2015, Diffusion-driven current transport to near-surface nanostructures. in 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE Institute of Electrical and Electronic Engineers, pp. 117-118, 15th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Province of China, 7/09/15. https://doi.org/10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures. / Kivisaari, Pyry; Riuttanen, Lauri; Suihkonen, Sami et al.
2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE Institute of Electrical and Electronic Engineers, 2015. p. 117-118.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Diffusion-driven current transport to near-surface nanostructures

AU - Kivisaari, Pyry

AU - Riuttanen, Lauri

AU - Suihkonen, Sami

AU - Oksanen, Jani

N1 - Conference code: 15

PY - 2015/5/10

Y1 - 2015/5/10

N2 - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

AB - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

KW - Charge carrier processes

KW - Doping

KW - Electric potential

KW - Gallium nitride

KW - Nanostructures

KW - Optimization

KW - Semiconductor process modeling

U2 - 10.1109/NUSOD.2015.7292850

DO - 10.1109/NUSOD.2015.7292850

M3 - Conference article in proceedings

SP - 117

EP - 118

BT - 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 15th International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 7 September 2015 through 11 September 2015

ER -

Diffusion-driven current transport to near-surface nanostructures

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this