Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Aapo Varpula (Corresponding Author), Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    36 Citations (Scopus)

    Abstract

    Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.
    Original languageEnglish
    Article number044506
    JournalJournal of Applied Physics
    Volume112
    Issue number4
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    thermionic emission
    solar energy
    cathodes
    photons
    electron affinity
    injection
    temperature dependence
    silicon
    electrons
    temperature

    Keywords

    • Electron affinity
    • element semiconductors
    • energy harvesting
    • numerical analysis
    • photons
    • silicon
    • solar energy conversion
    • surface recombination
    • thermionic emission

    Cite this

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    title = "Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters",
    abstract = "Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10{\%} at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15{\%}.",
    keywords = "Electron affinity, element semiconductors, energy harvesting, numerical analysis, photons, silicon, solar energy conversion, surface recombination, thermionic emission",
    author = "Aapo Varpula and Mika Prunnila",
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    year = "2012",
    doi = "10.1063/1.4747905",
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    journal = "Journal of Applied Physics",
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    }

    Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters. / Varpula, Aapo (Corresponding Author); Prunnila, Mika.

    In: Journal of Applied Physics, Vol. 112, No. 4, 044506, 2012.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

    AU - Varpula, Aapo

    AU - Prunnila, Mika

    N1 - Project code: 74803

    PY - 2012

    Y1 - 2012

    N2 - Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.

    AB - Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.

    KW - Electron affinity

    KW - element semiconductors

    KW - energy harvesting

    KW - numerical analysis

    KW - photons

    KW - silicon

    KW - solar energy conversion

    KW - surface recombination

    KW - thermionic emission

    U2 - 10.1063/1.4747905

    DO - 10.1063/1.4747905

    M3 - Article

    VL - 112

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 4

    M1 - 044506

    ER -