Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Aapo Varpula (Corresponding Author), Mika Prunnila

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)

Abstract

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.
Original languageEnglish
Article number044506
JournalJournal of Applied Physics
Volume112
Issue number4
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

thermionic emission
solar energy
cathodes
photons
electron affinity
injection
temperature dependence
silicon
electrons
temperature

Keywords

  • Electron affinity
  • element semiconductors
  • energy harvesting
  • numerical analysis
  • photons
  • silicon
  • solar energy conversion
  • surface recombination
  • thermionic emission

Cite this

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title = "Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters",
abstract = "Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10{\%} at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15{\%}.",
keywords = "Electron affinity, element semiconductors, energy harvesting, numerical analysis, photons, silicon, solar energy conversion, surface recombination, thermionic emission",
author = "Aapo Varpula and Mika Prunnila",
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language = "English",
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journal = "Journal of Applied Physics",
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publisher = "American Institute of Physics AIP",
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}

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters. / Varpula, Aapo (Corresponding Author); Prunnila, Mika.

In: Journal of Applied Physics, Vol. 112, No. 4, 044506, 2012.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

AU - Varpula, Aapo

AU - Prunnila, Mika

N1 - Project code: 74803

PY - 2012

Y1 - 2012

N2 - Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.

AB - Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800?K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.

KW - Electron affinity

KW - element semiconductors

KW - energy harvesting

KW - numerical analysis

KW - photons

KW - silicon

KW - solar energy conversion

KW - surface recombination

KW - thermionic emission

U2 - 10.1063/1.4747905

DO - 10.1063/1.4747905

M3 - Article

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

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ER -