Diffusion of silicon in ion implanted GaAs

Jari Likonen, T. Ahlgren, J. Slotte, Jyrki Räisänen, J. Keinonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific


    Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 power in 17 atoms/cm3 [1,21]. Experimentally it has been observed that Si diffusion in GaAs is concentration-dependent. In this work we have applied Fermi-level effect model proposed by Yu et al. [3]. The purpose of this paper is to explain high concentration Si diffusion in GaAs. The implantation dose used in this study is considerably higher than in earlier studies and the annealings also extend to lower temperatures. The solid solubility of substitutional Si in GaAs as a function of temperature is given, and the observed exponential behavior is explained qualitatively.
    Original languageEnglish
    Title of host publicationSecondary Ion Mass Spectrometry SIMS XI
    ISBN (Print)0-471-97826-4, 978-0-471-97826-8
    Publication statusPublished - 1998
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event11th International Conference on Secondary Ion Mass Spectrometry, SIMS XI - Orlando, United States
    Duration: 7 Sept 199712 Sept 1997


    Conference11th International Conference on Secondary Ion Mass Spectrometry, SIMS XI
    Country/TerritoryUnited States


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