Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi0.22Sb0.78)2Te3 films at room temperature

J. B. S. Mendes; O. Alves Santos; J. Holanda; Renan Pires Loreto; C. I. L. de Araujo; Cui-Zu Chang; J. S. Moodera; A. Azevedo; S. M. Rezende

doi:10.1103/PhysRevB.96.180415

Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi0.22Sb0.78)2Te3 films at room temperature

J. B. S. Mendes^*, O. Alves Santos, J. Holanda, Renan Pires Loreto, C. I. L. de Araujo, Cui-Zu Chang, J. S. Moodera, A. Azevedo, S. M. Rezende

^*Corresponding author for this work

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Abstract

We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi0.22Sb0.78)2Te3 film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi0.22Sb0.78)2Te3 layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi0.22Sb0.78)2Te3 layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.

Original language	English
Article number	180415
Journal	Physical Review B
Volume	96
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevB.96.180415
Publication status	Published - 28 Nov 2017
MoE publication type	A1 Journal article-refereed

Funding

This research was supported in Brazil by Conselho Nacional de Desenvolvimento Cientfico e Tecnolgico (CNPq), Coordena de Aperfeioamento de Pessoal de N-vel Superior (CAPES), Financiadora de Estudos e Projetos (FINEP), Fundao de Amparo Pesquisa do Estado de Minas Gerais (FAPEMIG), and Fundao de Amparo a Ciancia e Tecnologia do Estado de Pernambuco (FACEPE). C.-Z.C. and J.S.M. acknowledge support from NSF Grants No. DMR-1207469, No. DMR-1700137, and No. DMR-0819762 (MIT MRSEC), ONR Grant No. N00014-16-1-2657, and the STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319. C.-Z.C. is grateful for support from the startup provided by Penn State.

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10.1103/PhysRevB.96.180415

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Mendes, J. B. S., Santos, O. A., Holanda, J., Loreto, R. P., Araujo, C. I. L. D., Chang, C.-Z., Moodera, J. S., Azevedo, A., & Rezende, S. M. (2017). Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi0.22Sb0.78)2Te3 films at room temperature. Physical Review B, 96(18), Article 180415. https://doi.org/10.1103/PhysRevB.96.180415

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title = "Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi0.22Sb0.78)2Te3 films at room temperature",

abstract = "We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi0.22Sb0.78)2Te3 film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi0.22Sb0.78)2Te3 layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi0.22Sb0.78)2Te3 layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.",

author = "Mendes, {J. B. S.} and Santos, {O. Alves} and J. Holanda and Loreto, {Renan Pires} and Araujo, {C. I. L. de} and Cui-Zu Chang and Moodera, {J. S.} and A. Azevedo and Rezende, {S. M.}",

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AU - Santos, O. Alves

AU - Holanda, J.

AU - Loreto, Renan Pires

AU - Araujo, C. I. L. de

AU - Chang, Cui-Zu

AU - Moodera, J. S.

AU - Azevedo, A.

AU - Rezende, S. M.

PY - 2017/11/28

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N2 - We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi0.22Sb0.78)2Te3 film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi0.22Sb0.78)2Te3 layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi0.22Sb0.78)2Te3 layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.

AB - We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi0.22Sb0.78)2Te3 film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi0.22Sb0.78)2Te3 layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi0.22Sb0.78)2Te3 layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.

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Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi0.22Sb0.78)2Te3 films at room temperature

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