Direct bonding of oxidized cavity wafers

M. Palokangas; James Dekker; Kimmo Henttinen; J. Mäkmen

doi:10.1149/1.2982900

Direct bonding of oxidized cavity wafers

M. Palokangas, James Dekker, Kimmo Henttinen, J. Mäkmen

Okmetic Oyj

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

4 Citations (Scopus)

Abstract

SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.

Original language	English
Pages (from-to)	457-463
Journal	ECS Transactions
Volume	16
Issue number	8
DOIs	https://doi.org/10.1149/1.2982900
Publication status	Published - 2008
MoE publication type	A4 Article in a conference publication
Event	214th ECS Meeting: Semiconductor Wafer Bonding 10: Science, Technology, and Applications - Honolulu, United States Duration: 12 Oct 2008 → 17 Oct 2008

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title = "Direct bonding of oxidized cavity wafers",

abstract = "SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.",

author = "M. Palokangas and James Dekker and Kimmo Henttinen and J. M{\"a}kmen",

year = "2008",

doi = "10.1149/1.2982900",

language = "English",

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pages = "457--463",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society ECS",

number = "8",

note = "214th ECS Meeting : Semiconductor Wafer Bonding 10: Science, Technology, and Applications ; Conference date: 12-10-2008 Through 17-10-2008",

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TY - JOUR

T1 - Direct bonding of oxidized cavity wafers

AU - Palokangas, M.

AU - Dekker, James

AU - Henttinen, Kimmo

AU - Mäkmen, J.

PY - 2008

Y1 - 2008

N2 - SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.

AB - SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.

U2 - 10.1149/1.2982900

DO - 10.1149/1.2982900

M3 - Article in a proceedings journal

SN - 1938-5862

VL - 16

SP - 457

EP - 463

JO - ECS Transactions

JF - ECS Transactions

IS - 8

T2 - 214th ECS Meeting

Y2 - 12 October 2008 through 17 October 2008

ER -

Direct bonding of oxidized cavity wafers

Abstract

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