Direct bonding of oxidized cavity wafers

M. Palokangas, James Dekker, Kimmo Henttinen, J. Mäkmen

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

3 Citations (Scopus)

Abstract

SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.
Original languageEnglish
Pages (from-to)457-463
JournalECS Transactions
Volume16
Issue number8
DOIs
Publication statusPublished - 2008
MoE publication typeA4 Article in a conference publication
Event214th ECS Meeting: Semiconductor Wafer Bonding 10: Science, Technology, and Applications - Honolulu, United States
Duration: 12 Oct 200817 Oct 2008

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MEMS
Oxidation
Thermooxidation
Etching
Fabrication
Oxides
Geometry
Temperature
Hot Temperature

Cite this

Palokangas, M., Dekker, J., Henttinen, K., & Mäkmen, J. (2008). Direct bonding of oxidized cavity wafers. ECS Transactions, 16(8), 457-463. https://doi.org/10.1149/1.2982900
Palokangas, M. ; Dekker, James ; Henttinen, Kimmo ; Mäkmen, J. / Direct bonding of oxidized cavity wafers. In: ECS Transactions. 2008 ; Vol. 16, No. 8. pp. 457-463.
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Palokangas, M, Dekker, J, Henttinen, K & Mäkmen, J 2008, 'Direct bonding of oxidized cavity wafers', ECS Transactions, vol. 16, no. 8, pp. 457-463. https://doi.org/10.1149/1.2982900

Direct bonding of oxidized cavity wafers. / Palokangas, M.; Dekker, James; Henttinen, Kimmo; Mäkmen, J.

In: ECS Transactions, Vol. 16, No. 8, 2008, p. 457-463.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

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AU - Palokangas, M.

AU - Dekker, James

AU - Henttinen, Kimmo

AU - Mäkmen, J.

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N2 - SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.

AB - SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.

U2 - 10.1149/1.2982900

DO - 10.1149/1.2982900

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