Direct bonding of oxidized cavity wafers

M. Palokangas, James Dekker, Kimmo Henttinen, J. Mäkmen

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    3 Citations (Scopus)

    Abstract

    SOI wafers with buried cavities can be used in MEMS fabrication to give more freedom in design and to simplify the process. Sometimes an etch stop layer is needed when DRIE is used to release the MEMS structures in order to prevent etching from continuing at the bottom of the cavity. Thermal oxidation of the cavity wafer as a method for forming an etch stop layer was studied. It was found that oxidation parameters such as temperature and thickness affect the formation of dislocations which in turn may cause voids in bonding. Higher oxidation temperature and thicker oxide were found to yield better bonding results. Patterns and geometry of etched features also play a role.
    Original languageEnglish
    Pages (from-to)457-463
    JournalECS Transactions
    Volume16
    Issue number8
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA4 Article in a conference publication
    Event214th ECS Meeting: Semiconductor Wafer Bonding 10: Science, Technology, and Applications - Honolulu, United States
    Duration: 12 Oct 200817 Oct 2008

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  • Cite this

    Palokangas, M., Dekker, J., Henttinen, K., & Mäkmen, J. (2008). Direct bonding of oxidized cavity wafers. ECS Transactions, 16(8), 457-463. https://doi.org/10.1149/1.2982900