Direct bonding of thick film polysilicon to glass substrates

Hannu Luoto, Tommi Suni, Kimmo Henttinen, Martin Kulawski

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have concentrated on the development of polishing processes for polysilicon and then bonding it to quartz, Pyrex, and low-alkali glass. Simultaneously, basic investigation of high-temperature direct bonding of polysilicon is initiated where Si∕Si - and Si∕Ox -bonding is studied. The main emphasis in material selection has been in thick atmospheric-pressure chemical vapor deposited polysilicon. Spontaneous bonding was achieved with all wafer combinations. Plasma-assisted polysilicon-to-glass bonding was found to yield void free interfaces, whereas high-temperature bonded couples showed void formation. Thus, low-temperature bonding for polysilicon has been enabled with an advanced polishing process.
Original languageEnglish
Pages (from-to)G981-G985
JournalJournal of the Electrochemical Society
Volume153
Issue number11
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Keywords

  • silicon
  • elemental semiconductors
  • glass
  • bonding processes
  • micromechanical devices
  • quartz
  • voids (solid)
  • polishing

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