Direct bonding of thick film polysilicon to glass substrates

Hannu Luoto, Tommi Suni, Kimmo Henttinen, Martin Kulawski

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have concentrated on the development of polishing processes for polysilicon and then bonding it to quartz, Pyrex, and low-alkali glass. Simultaneously, basic investigation of high-temperature direct bonding of polysilicon is initiated where Si∕Si - and Si∕Ox -bonding is studied. The main emphasis in material selection has been in thick atmospheric-pressure chemical vapor deposited polysilicon. Spontaneous bonding was achieved with all wafer combinations. Plasma-assisted polysilicon-to-glass bonding was found to yield void free interfaces, whereas high-temperature bonded couples showed void formation. Thus, low-temperature bonding for polysilicon has been enabled with an advanced polishing process.
Original languageEnglish
Pages (from-to)G981-G985
Number of pages5
JournalJournal of the Electrochemical Society
Volume153
Issue number11
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Thick films
Polysilicon
Glass
Substrates
Polishing
MEMS
Glass bonding
Quartz
Alkalies
Encapsulation
Temperature
Atmospheric pressure
Actuators
Vapors
Plasmas
Fabrication
Sensors

Keywords

  • silicon
  • elemental semiconductors
  • glass
  • bonding processes
  • micromechanical devices
  • quartz
  • voids (solid)
  • polishing

Cite this

Luoto, Hannu ; Suni, Tommi ; Henttinen, Kimmo ; Kulawski, Martin. / Direct bonding of thick film polysilicon to glass substrates. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 11. pp. G981-G985.
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abstract = "In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have concentrated on the development of polishing processes for polysilicon and then bonding it to quartz, Pyrex, and low-alkali glass. Simultaneously, basic investigation of high-temperature direct bonding of polysilicon is initiated where Si∕Si - and Si∕Ox -bonding is studied. The main emphasis in material selection has been in thick atmospheric-pressure chemical vapor deposited polysilicon. Spontaneous bonding was achieved with all wafer combinations. Plasma-assisted polysilicon-to-glass bonding was found to yield void free interfaces, whereas high-temperature bonded couples showed void formation. Thus, low-temperature bonding for polysilicon has been enabled with an advanced polishing process.",
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Luoto, H, Suni, T, Henttinen, K & Kulawski, M 2006, 'Direct bonding of thick film polysilicon to glass substrates', Journal of the Electrochemical Society, vol. 153, no. 11, pp. G981-G985. https://doi.org/10.1149/1.2345578

Direct bonding of thick film polysilicon to glass substrates. / Luoto, Hannu; Suni, Tommi; Henttinen, Kimmo; Kulawski, Martin.

In: Journal of the Electrochemical Society, Vol. 153, No. 11, 2006, p. G981-G985.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Direct bonding of thick film polysilicon to glass substrates

AU - Luoto, Hannu

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Kulawski, Martin

N1 - Project code: 6473

PY - 2006

Y1 - 2006

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AB - In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have concentrated on the development of polishing processes for polysilicon and then bonding it to quartz, Pyrex, and low-alkali glass. Simultaneously, basic investigation of high-temperature direct bonding of polysilicon is initiated where Si∕Si - and Si∕Ox -bonding is studied. The main emphasis in material selection has been in thick atmospheric-pressure chemical vapor deposited polysilicon. Spontaneous bonding was achieved with all wafer combinations. Plasma-assisted polysilicon-to-glass bonding was found to yield void free interfaces, whereas high-temperature bonded couples showed void formation. Thus, low-temperature bonding for polysilicon has been enabled with an advanced polishing process.

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KW - elemental semiconductors

KW - glass

KW - bonding processes

KW - micromechanical devices

KW - quartz

KW - voids (solid)

KW - polishing

U2 - 10.1149/1.2345578

DO - 10.1149/1.2345578

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