Direct measurement of spurious mode properties in thin film BAW resonator

K. Kokkonen, Tuomas Pensala, Johanna Meltaus, M. Kaivola

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented
Original languageEnglish
Title of host publicationProceedings of the IEEE Ultrasonics Symposium, IUS 2010
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages420-423
ISBN (Electronic)978-1-4577-0381-2
ISBN (Print)978-1-4577-0382-9
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventIEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
Duration: 11 Oct 201014 Oct 2010

Conference

ConferenceIEEE International Ultrasonics Symposium, IUS 2010
CountryUnited States
CitySan Diego, CA
Period11/10/1014/10/10

Fingerprint

resonators
thin films
diagrams
acoustics
multimode resonators
interferometers
curves
equivalent circuits
lasers

Cite this

Kokkonen, K., Pensala, T., Meltaus, J., & Kaivola, M. (2010). Direct measurement of spurious mode properties in thin film BAW resonator. In Proceedings of the IEEE Ultrasonics Symposium, IUS 2010 (pp. 420-423). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2010.5935750
Kokkonen, K. ; Pensala, Tuomas ; Meltaus, Johanna ; Kaivola, M. / Direct measurement of spurious mode properties in thin film BAW resonator. Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers , 2010. pp. 420-423
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abstract = "The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented",
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Kokkonen, K, Pensala, T, Meltaus, J & Kaivola, M 2010, Direct measurement of spurious mode properties in thin film BAW resonator. in Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers , pp. 420-423, IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 11/10/10. https://doi.org/10.1109/ULTSYM.2010.5935750

Direct measurement of spurious mode properties in thin film BAW resonator. / Kokkonen, K.; Pensala, Tuomas; Meltaus, Johanna; Kaivola, M.

Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers , 2010. p. 420-423.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented

AB - The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented

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Kokkonen K, Pensala T, Meltaus J, Kaivola M. Direct measurement of spurious mode properties in thin film BAW resonator. In Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers . 2010. p. 420-423 https://doi.org/10.1109/ULTSYM.2010.5935750