Direct measurement of spurious mode properties in thin film BAW resonator

K. Kokkonen; Tuomas Pensala; Johanna Meltaus; M. Kaivola

doi:10.1109/ULTSYM.2010.5935750

Direct measurement of spurious mode properties in thin film BAW resonator

K. Kokkonen
, Tuomas Pensala
, Johanna Meltaus
, M. Kaivola

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented

Original language	English
Title of host publication	Proceedings of the IEEE Ultrasonics Symposium, IUS 2010
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	420-423
ISBN (Electronic)	978-1-4577-0381-2
ISBN (Print)	978-1-4577-0382-9
DOIs	https://doi.org/10.1109/ULTSYM.2010.5935750
Publication status	Published - 2010
MoE publication type	A4 Article in a conference publication
Event	IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States Duration: 11 Oct 2010 → 14 Oct 2010

Conference

Conference	IEEE International Ultrasonics Symposium, IUS 2010
Country/Territory	United States
City	San Diego, CA
Period	11/10/10 → 14/10/10

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10.1109/ULTSYM.2010.5935750

Cite this

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title = "Direct measurement of spurious mode properties in thin film BAW resonator",

abstract = "The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented",

author = "K. Kokkonen and Tuomas Pensala and Johanna Meltaus and M. Kaivola",

year = "2010",

doi = "10.1109/ULTSYM.2010.5935750",

language = "English",

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pages = "420--423",

booktitle = "Proceedings of the IEEE Ultrasonics Symposium, IUS 2010",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE International Ultrasonics Symposium, IUS 2010 ; Conference date: 11-10-2010 Through 14-10-2010",

}

Kokkonen, K, Pensala, T, Meltaus, J & Kaivola, M 2010, Direct measurement of spurious mode properties in thin film BAW resonator. in Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers, pp. 420-423, IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 11/10/10. https://doi.org/10.1109/ULTSYM.2010.5935750

Direct measurement of spurious mode properties in thin film BAW resonator. / Kokkonen, K.; Pensala, Tuomas; Meltaus, Johanna et al.
Proceedings of the IEEE Ultrasonics Symposium, IUS 2010. IEEE Institute of Electrical and Electronic Engineers, 2010. p. 420-423.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Direct measurement of spurious mode properties in thin film BAW resonator

AU - Kokkonen, K.

AU - Pensala, Tuomas

AU - Meltaus, Johanna

AU - Kaivola, M.

PY - 2010

Y1 - 2010

N2 - The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented

AB - The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented

U2 - 10.1109/ULTSYM.2010.5935750

DO - 10.1109/ULTSYM.2010.5935750

M3 - Conference article in proceedings

SN - 978-1-4577-0382-9

SP - 420

EP - 423

BT - Proceedings of the IEEE Ultrasonics Symposium, IUS 2010

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE International Ultrasonics Symposium, IUS 2010

Y2 - 11 October 2010 through 14 October 2010

ER -

Direct measurement of spurious mode properties in thin film BAW resonator

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