Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

R. L. Puurunen; T. Suni; O. Ylivaara; H. Kondo; M. Ammar; T. Ishida; H. Fujita; A. Bosseboeuf; S. Zaima; H. Kattelus

doi:10.1109/TRANSDUCERS.2011.5969474

Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films

R. L. Puurunen, T. Suni, O. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Abstract

In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO₂ insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO₂, and Al₂O₃ for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	978-981
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969474
Publication status	Published - 1 Aug 2011
MoE publication type	A4 Article in a conference publication
Event	16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11 - Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011

Conference

Conference	16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11
Abbreviated title	TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	5/06/11 → 9/06/11

Keywords

AlO
ALD
Atomic layer deposition
silicon-on-insulator
TiO
wafer bonding

Access to Document

10.1109/TRANSDUCERS.2011.5969474

Cite this

Puurunen, R. L., Suni, T., Ylivaara, O., Kondo, H., Ammar, M., Ishida, T., Fujita, H., Bosseboeuf, A., Zaima, S., & Kattelus, H. (2011). Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 978-981). Article 5969474 https://doi.org/10.1109/TRANSDUCERS.2011.5969474

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abstract = "In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.",

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note = "Project 23787 ALEBOND; 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers{\textquoteright}11<br/>, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

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Puurunen, RL, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969474, pp. 978-981, 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11
, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969474

Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films. / Puurunen, R. L.; Suni, T.; Ylivaara, O. et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 978-981 5969474.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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