Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

R. L. Puurunen, T. Suni, O. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages978-981
Number of pages4
DOIs
Publication statusPublished - 1 Aug 2011
MoE publication typeA4 Article in a conference publication
Event16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 5 Jun 20119 Jun 2011

Conference

Conference16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Abbreviated titleTRANSDUCERS'11
CountryChina
CityBeijing
Period5/06/119/06/11

Fingerprint

Wafer bonding
Thin films
Silicon
Silicon wafers
MEMS
Oxides
Substrates
Industry

Keywords

  • AlO
  • ALD
  • Atomic layer deposition
  • silicon-on-insulator
  • TiO
  • wafer bonding

Cite this

Puurunen, R. L., Suni, T., Ylivaara, O., Kondo, H., Ammar, M., Ishida, T., ... Kattelus, H. (2011). Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 978-981). [5969474] https://doi.org/10.1109/TRANSDUCERS.2011.5969474
Puurunen, R. L. ; Suni, T. ; Ylivaara, O. ; Kondo, H. ; Ammar, M. ; Ishida, T. ; Fujita, H. ; Bosseboeuf, A. ; Zaima, S. ; Kattelus, H. / Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 978-981
@inproceedings{a014662b243c4e169ecdbd9d3d3a1991,
title = "Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films",
abstract = "In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.",
keywords = "AlO, ALD, Atomic layer deposition, silicon-on-insulator, TiO, wafer bonding",
author = "Puurunen, {R. L.} and T. Suni and O. Ylivaara and H. Kondo and M. Ammar and T. Ishida and H. Fujita and A. Bosseboeuf and S. Zaima and H. Kattelus",
note = "Project 23787 ALEBOND",
year = "2011",
month = "8",
day = "1",
doi = "10.1109/TRANSDUCERS.2011.5969474",
language = "English",
isbn = "9781457701573",
pages = "978--981",
booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

}

Puurunen, RL, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969474, pp. 978-981, 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969474

Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. / Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 978-981 5969474.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

AU - Puurunen, R. L.

AU - Suni, T.

AU - Ylivaara, O.

AU - Kondo, H.

AU - Ammar, M.

AU - Ishida, T.

AU - Fujita, H.

AU - Bosseboeuf, A.

AU - Zaima, S.

AU - Kattelus, H.

N1 - Project 23787 ALEBOND

PY - 2011/8/1

Y1 - 2011/8/1

N2 - In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

AB - In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

KW - AlO

KW - ALD

KW - Atomic layer deposition

KW - silicon-on-insulator

KW - TiO

KW - wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=80052113494&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2011.5969474

DO - 10.1109/TRANSDUCERS.2011.5969474

M3 - Conference article in proceedings

SN - 9781457701573

SP - 978

EP - 981

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

ER -

Puurunen RL, Suni T, Ylivaara O, Kondo H, Ammar M, Ishida T et al. Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 978-981. 5969474 https://doi.org/10.1109/TRANSDUCERS.2011.5969474