Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

R. L. Puurunen, T. Suni, O. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    5 Citations (Scopus)

    Abstract

    In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

    Original languageEnglish
    Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
    Pages978-981
    Number of pages4
    DOIs
    Publication statusPublished - 1 Aug 2011
    MoE publication typeA4 Article in a conference publication
    Event16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
    Duration: 5 Jun 20119 Jun 2011

    Conference

    Conference16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
    Abbreviated titleTRANSDUCERS'11
    CountryChina
    CityBeijing
    Period5/06/119/06/11

    Fingerprint

    Wafer bonding
    Thin films
    Silicon
    Silicon wafers
    MEMS
    Oxides
    Substrates
    Industry

    Keywords

    • AlO
    • ALD
    • Atomic layer deposition
    • silicon-on-insulator
    • TiO
    • wafer bonding

    Cite this

    Puurunen, R. L., Suni, T., Ylivaara, O., Kondo, H., Ammar, M., Ishida, T., ... Kattelus, H. (2011). Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 978-981). [5969474] https://doi.org/10.1109/TRANSDUCERS.2011.5969474
    Puurunen, R. L. ; Suni, T. ; Ylivaara, O. ; Kondo, H. ; Ammar, M. ; Ishida, T. ; Fujita, H. ; Bosseboeuf, A. ; Zaima, S. ; Kattelus, H. / Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 978-981
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    title = "Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films",
    abstract = "In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.",
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    author = "Puurunen, {R. L.} and T. Suni and O. Ylivaara and H. Kondo and M. Ammar and T. Ishida and H. Fujita and A. Bosseboeuf and S. Zaima and H. Kattelus",
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    Puurunen, RL, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969474, pp. 978-981, 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969474

    Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. / Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.

    2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 978-981 5969474.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Puurunen, R. L.

    AU - Suni, T.

    AU - Ylivaara, O.

    AU - Kondo, H.

    AU - Ammar, M.

    AU - Ishida, T.

    AU - Fujita, H.

    AU - Bosseboeuf, A.

    AU - Zaima, S.

    AU - Kattelus, H.

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    AB - In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

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    Puurunen RL, Suni T, Ylivaara O, Kondo H, Ammar M, Ishida T et al. Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 978-981. 5969474 https://doi.org/10.1109/TRANSDUCERS.2011.5969474