Dislocations at the interface between sapphire and GaN
- Aapo Lankinen*
- , T. Lang
- , Sami Suihkonen
- , O. Svensk
- , A. Säynätjoki
- , T. O. Tuomi
- , P. J. McNally
- , M. Odnoblyudov
- , V. Bougrov
- , A. N. Danilewsky
- , P. Bergman
- , R. Simon
*Corresponding author for this work
- Dublin City University
- Ioffe Institute
- University of Freiburg
- University of Linköping
- Karlsruhe Institute of Technology (KIT)
- Helsinki University of Technology
Research output: Contribution to journal › Article › Scientific › peer-review