Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Jingyu Duan; Janne S. Lehtinen; Michael A. Fogarty; Simon Schaal; Michelle M.L. Lam; Alberto Ronzani; Andrey Shchepetov; Panu Koppinen; Mika Prunnila; Fernando Gonzalez-Zalba; John J.L. Morton

doi:10.1063/5.0040259

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Jingyu Duan^*, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle M.L. Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J.L. Morton^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

Abstract

We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal-oxide-semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) μs for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon.

Original language	English
Article number	164002
Journal	Applied Physics Letters
Volume	118
Issue number	16
DOIs	https://doi.org/10.1063/5.0040259
Publication status	Published - 19 Apr 2021
MoE publication type	A1 Journal article-refereed

Funding

The authors gratefully acknowledge the financial support from the European Union’s Horizon 2020 research and innovation programme under Grant Agreement Nos. 688539 and 766853, as well as the Engineering and Physical Sciences Research Council (EPSRC) through the Centre for Doctoral Training in Delivering Quantum Technologies (No. EP/L015242/1), QUES2T (No. EP/N015118/1), the Hub in Quantum Computing and Simulation (No. EP/ T001062/1) and Academy of Finland project QuMOS (Project Nos. 288907 and 287768) and Center of Excellence program Project No. 312294.

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10.1063/5.0040259

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title = "Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire",

abstract = "We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal-oxide-semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) μs for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon.",

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AU - Duan, Jingyu

AU - Lehtinen, Janne S.

AU - Fogarty, Michael A.

AU - Schaal, Simon

AU - Lam, Michelle M.L.

AU - Ronzani, Alberto

AU - Shchepetov, Andrey

AU - Koppinen, Panu

AU - Prunnila, Mika

AU - Gonzalez-Zalba, Fernando

AU - Morton, John J.L.

PY - 2021/4/19

Y1 - 2021/4/19

N2 - We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal-oxide-semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) μs for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon.

AB - We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal-oxide-semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) μs for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon.

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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

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