Donor levels and the DX-center in Si-doped AlGaInP

T. Laine, Jatta Partanen, J. Mäkinen, K. Saarinen, Pekka Hautojärvi, Jari Likonen, Timo Hakkarainen, Kirsi Tappura, Harri Asonen, Markus Pessa, J. Kauppinen, M. Paalanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

Original languageEnglish
Title of host publicationProceedings of the XXIX Annual Conference of the Finnish Physical Society
Subtitle of host publicationMarch 16-18, 1995, Jyväskylä, Finland
PublisherUniversity of Jyväskylä
ISBN (Print)951-34-0490-0
Publication statusPublished - 1995
MoE publication typeB3 Non-refereed article in conference proceedings
EventXXIX Annual Conference of the Finnish Physical Society - Jyväskylä, Finland
Duration: 16 Mar 199518 Mar 1995

Publication series

SeriesUniversity of Jyväskylä: Department of Physics. Research Report
Number1/1995
ISSN0075-465X

Conference

ConferenceXXIX Annual Conference of the Finnish Physical Society
CountryFinland
CityJyväskylä
Period16/03/9518/03/95

Cite this

Laine, T., Partanen, J., Mäkinen, J., Saarinen, K., Hautojärvi, P., Likonen, J., Hakkarainen, T., Tappura, K., Asonen, H., Pessa, M., Kauppinen, J., & Paalanen, M. (1995). Donor levels and the DX-center in Si-doped AlGaInP. In Proceedings of the XXIX Annual Conference of the Finnish Physical Society: March 16-18, 1995, Jyväskylä, Finland University of Jyväskylä. University of Jyväskylä: Department of Physics. Research Report, No. 1/1995