Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy

J. Mäkinen, T. Laine, Jatta Partanen, K. Saarinen, Pekka Hautojärvi, Kirsi Tappura, Timo Hakkarainen, Harri Asonen, Markus Pessa, J. Kauppinen, K. Vänttinen, M. Paalanen, Jari Likonen

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Abstract

We have investigated donor levels and the local structure of DX centers in Si-doped AlxGa0.51−xIn0.49P grown by gas-source molecular-beam epitaxy. In a ternary alloy Ga0.51In0.49P, Si donors form only shallow donor states. In contrast, in quaternary alloys with x≥0.25 a deep electron trapping center is observed. Hall measurements reveal an activated behavior of the mobile electron concentration, and the thermal binding energy of the dominant donor state is ∼0.1 eV when the Al fraction is x=0.25. Illumination with infrared or red light results in persistent photoconductivity at T≤120 K. The appearance of the DX level in the band gap around x≊0.1 gives a consistent picture of the experimental findings. Positron annihilation spectroscopy shows that the Si DX center is a vacancylike defect with a local structure equivalent to that found earlier in AlxGa1−xAs. The very different core shell structures of the group-III (Ga, In) and group-V (P) atoms give direct evidence that the vacancy has P atoms as its nearest neighbors and we identify it as a vacancy in the group-III sublattice. The structural data give support to the vacancy-interstitial model, which predicts that the donor impurities can take two different configurations in sp-bonded semiconductors.
Original languageEnglish
Pages (from-to)7851-7862
Number of pages12
JournalPhysical Review B: Condensed Matter
Volume53
Issue number12
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Molecular beam epitaxy
Vacancies
molecular beam epitaxy
Gas source molecular beam epitaxy
Positron annihilation spectroscopy
quaternary alloys
Atoms
Ternary alloys
Electrons
ternary alloys
Photoconductivity
positron annihilation
Binding energy
photoconductivity
sublattices
atoms
interstitials
Energy gap
electrons
Lighting

Cite this

Mäkinen, J. ; Laine, T. ; Partanen, Jatta ; Saarinen, K. ; Hautojärvi, Pekka ; Tappura, Kirsi ; Hakkarainen, Timo ; Asonen, Harri ; Pessa, Markus ; Kauppinen, J. ; Vänttinen, K. ; Paalanen, M. ; Likonen, Jari. / Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. In: Physical Review B: Condensed Matter. 1996 ; Vol. 53, No. 12. pp. 7851-7862.
@article{e1601b44aa4f480b90e00b25b8c21439,
title = "Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy",
abstract = "We have investigated donor levels and the local structure of DX centers in Si-doped AlxGa0.51−xIn0.49P grown by gas-source molecular-beam epitaxy. In a ternary alloy Ga0.51In0.49P, Si donors form only shallow donor states. In contrast, in quaternary alloys with x≥0.25 a deep electron trapping center is observed. Hall measurements reveal an activated behavior of the mobile electron concentration, and the thermal binding energy of the dominant donor state is ∼0.1 eV when the Al fraction is x=0.25. Illumination with infrared or red light results in persistent photoconductivity at T≤120 K. The appearance of the DX level in the band gap around x≊0.1 gives a consistent picture of the experimental findings. Positron annihilation spectroscopy shows that the Si DX center is a vacancylike defect with a local structure equivalent to that found earlier in AlxGa1−xAs. The very different core shell structures of the group-III (Ga, In) and group-V (P) atoms give direct evidence that the vacancy has P atoms as its nearest neighbors and we identify it as a vacancy in the group-III sublattice. The structural data give support to the vacancy-interstitial model, which predicts that the donor impurities can take two different configurations in sp-bonded semiconductors.",
author = "J. M{\"a}kinen and T. Laine and Jatta Partanen and K. Saarinen and Pekka Hautoj{\"a}rvi and Kirsi Tappura and Timo Hakkarainen and Harri Asonen and Markus Pessa and J. Kauppinen and K. V{\"a}nttinen and M. Paalanen and Jari Likonen",
note = "Project code: KET4134",
year = "1996",
doi = "10.1103/PhysRevB.53.7851",
language = "English",
volume = "53",
pages = "7851--7862",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
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Mäkinen, J, Laine, T, Partanen, J, Saarinen, K, Hautojärvi, P, Tappura, K, Hakkarainen, T, Asonen, H, Pessa, M, Kauppinen, J, Vänttinen, K, Paalanen, M & Likonen, J 1996, 'Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy', Physical Review B: Condensed Matter, vol. 53, no. 12, pp. 7851-7862. https://doi.org/10.1103/PhysRevB.53.7851

Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. / Mäkinen, J.; Laine, T.; Partanen, Jatta; Saarinen, K.; Hautojärvi, Pekka; Tappura, Kirsi; Hakkarainen, Timo; Asonen, Harri; Pessa, Markus; Kauppinen, J.; Vänttinen, K.; Paalanen, M.; Likonen, Jari.

In: Physical Review B: Condensed Matter, Vol. 53, No. 12, 1996, p. 7851-7862.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy

AU - Mäkinen, J.

AU - Laine, T.

AU - Partanen, Jatta

AU - Saarinen, K.

AU - Hautojärvi, Pekka

AU - Tappura, Kirsi

AU - Hakkarainen, Timo

AU - Asonen, Harri

AU - Pessa, Markus

AU - Kauppinen, J.

AU - Vänttinen, K.

AU - Paalanen, M.

AU - Likonen, Jari

N1 - Project code: KET4134

PY - 1996

Y1 - 1996

N2 - We have investigated donor levels and the local structure of DX centers in Si-doped AlxGa0.51−xIn0.49P grown by gas-source molecular-beam epitaxy. In a ternary alloy Ga0.51In0.49P, Si donors form only shallow donor states. In contrast, in quaternary alloys with x≥0.25 a deep electron trapping center is observed. Hall measurements reveal an activated behavior of the mobile electron concentration, and the thermal binding energy of the dominant donor state is ∼0.1 eV when the Al fraction is x=0.25. Illumination with infrared or red light results in persistent photoconductivity at T≤120 K. The appearance of the DX level in the band gap around x≊0.1 gives a consistent picture of the experimental findings. Positron annihilation spectroscopy shows that the Si DX center is a vacancylike defect with a local structure equivalent to that found earlier in AlxGa1−xAs. The very different core shell structures of the group-III (Ga, In) and group-V (P) atoms give direct evidence that the vacancy has P atoms as its nearest neighbors and we identify it as a vacancy in the group-III sublattice. The structural data give support to the vacancy-interstitial model, which predicts that the donor impurities can take two different configurations in sp-bonded semiconductors.

AB - We have investigated donor levels and the local structure of DX centers in Si-doped AlxGa0.51−xIn0.49P grown by gas-source molecular-beam epitaxy. In a ternary alloy Ga0.51In0.49P, Si donors form only shallow donor states. In contrast, in quaternary alloys with x≥0.25 a deep electron trapping center is observed. Hall measurements reveal an activated behavior of the mobile electron concentration, and the thermal binding energy of the dominant donor state is ∼0.1 eV when the Al fraction is x=0.25. Illumination with infrared or red light results in persistent photoconductivity at T≤120 K. The appearance of the DX level in the band gap around x≊0.1 gives a consistent picture of the experimental findings. Positron annihilation spectroscopy shows that the Si DX center is a vacancylike defect with a local structure equivalent to that found earlier in AlxGa1−xAs. The very different core shell structures of the group-III (Ga, In) and group-V (P) atoms give direct evidence that the vacancy has P atoms as its nearest neighbors and we identify it as a vacancy in the group-III sublattice. The structural data give support to the vacancy-interstitial model, which predicts that the donor impurities can take two different configurations in sp-bonded semiconductors.

U2 - 10.1103/PhysRevB.53.7851

DO - 10.1103/PhysRevB.53.7851

M3 - Article

VL - 53

SP - 7851

EP - 7862

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

ER -