Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Y. Fedorenko (Corresponding Author), T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.
Original languageUndefined
Pages (from-to)181-184
Number of pages5
JournalThin Solid Films
Volume428
Issue number1-2
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed
EventSymposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure, of the E-MRS Spring Conference - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

Cite this

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title = "Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique",
abstract = "We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.",
author = "Y. Fedorenko and T. Jouhti and J. Konttinen and Jari Likonen and M. Pessa",
year = "2003",
doi = "10.1016/S0040-6090(02)01192-6",
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volume = "428",
pages = "181--184",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
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Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique. / Fedorenko, Y. (Corresponding Author); Jouhti, T.; Konttinen, J.; Likonen, Jari; Pessa, M.

In: Thin Solid Films, Vol. 428, No. 1-2, 2003, p. 181-184.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

AU - Fedorenko, Y.

AU - Jouhti, T.

AU - Konttinen, J.

AU - Likonen, Jari

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

AB - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

U2 - 10.1016/S0040-6090(02)01192-6

DO - 10.1016/S0040-6090(02)01192-6

M3 - Article

VL - 428

SP - 181

EP - 184

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -