Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Y. Fedorenko (Corresponding Author), T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.
    Original languageUndefined
    Pages (from-to)181-184
    Number of pages5
    JournalThin Solid Films
    Volume428
    Issue number1-2
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed
    EventSymposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure, of the E-MRS Spring Conference - Strasbourg, France
    Duration: 18 Jun 200221 Jun 2002

    Cite this

    @article{9cb3283d898d4e6a94a1e25418474ca6,
    title = "Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique",
    abstract = "We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.",
    author = "Y. Fedorenko and T. Jouhti and J. Konttinen and Jari Likonen and M. Pessa",
    year = "2003",
    doi = "10.1016/S0040-6090(02)01192-6",
    language = "Undefined",
    volume = "428",
    pages = "181--184",
    journal = "Thin Solid Films",
    issn = "0040-6090",
    publisher = "Elsevier",
    number = "1-2",

    }

    Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique. / Fedorenko, Y. (Corresponding Author); Jouhti, T.; Konttinen, J.; Likonen, Jari; Pessa, M.

    In: Thin Solid Films, Vol. 428, No. 1-2, 2003, p. 181-184.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

    AU - Fedorenko, Y.

    AU - Jouhti, T.

    AU - Konttinen, J.

    AU - Likonen, Jari

    AU - Pessa, M.

    PY - 2003

    Y1 - 2003

    N2 - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

    AB - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

    U2 - 10.1016/S0040-6090(02)01192-6

    DO - 10.1016/S0040-6090(02)01192-6

    M3 - Article

    VL - 428

    SP - 181

    EP - 184

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

    IS - 1-2

    ER -