We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.
|Number of pages||5|
|Journal||Thin Solid Films|
|Publication status||Published - 2003|
|MoE publication type||A1 Journal article-refereed|
|Event||2002 E-MRS Spring Meeting: Symposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure - Strasbourg, France|
Duration: 18 Jun 2002 → 21 Jun 2002
Fedorenko, Y., Jouhti, T., Konttinen, J., Likonen, J., & Pessa, M. (2003). Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique. Thin Solid Films, 428(1-2), 181-184. https://doi.org/10.1016/S0040-6090(02)01192-6