Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Y. Fedorenko (Corresponding Author), T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.
    Original languageUndefined
    Pages (from-to)181-184
    Number of pages5
    JournalThin Solid Films
    Volume428
    Issue number1-2
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed
    Event2002 E-MRS Spring Meeting: Symposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure - Strasbourg, France
    Duration: 18 Jun 200221 Jun 2002

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