Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Y. Fedorenko; T. Jouhti; J. Konttinen; Jari Likonen; M. Pessa

doi:10.1016/S0040-6090(02)01192-6

Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Y. Fedorenko^*
, T. Jouhti
, J. Konttinen
, Jari Likonen
, M. Pessa

^*Corresponding author for this work

BA4511 Fusion energy

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of Al_xGa_1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

Original language	English
Pages (from-to)	181-184
Journal	Thin Solid Films
Volume	428
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01192-6
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed
Event	2002 E-MRS Spring Meeting: Symposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1016/S0040-6090(02)01192-6

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@article{9cb3283d898d4e6a94a1e25418474ca6,

title = "Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22",

abstract = "We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.",

author = "Y. Fedorenko and T. Jouhti and J. Konttinen and Jari Likonen and M. Pessa",

year = "2003",

doi = "10.1016/S0040-6090(02)01192-6",

language = "English",

volume = "428",

pages = "181--184",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

note = "2002 E-MRS Spring Meeting : Symposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22

AU - Fedorenko, Y.

AU - Jouhti, T.

AU - Konttinen, J.

AU - Likonen, Jari

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

AB - We assessed the capability of electrochemical voltage–capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1−xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage–capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.

U2 - 10.1016/S0040-6090(02)01192-6

DO - 10.1016/S0040-6090(02)01192-6

M3 - Article

SN - 0040-6090

VL - 428

SP - 181

EP - 184

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - 2002 E-MRS Spring Meeting

Y2 - 18 June 2002 through 21 June 2002

ER -

Doping impurity distribution and crystal quality evaluation of AlGaAs:Si films (0.22<x<0.86) by electrochemical etching technique

Abstract

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