Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells

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Abstract

The gate bias dependency of conductivity σ is examined in two Si quantum wells with well thickness tw = 7 run and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non‐monotonic features as a function of gate voltages. We show that a strong minimum in σ occurs close to the threshold of second sub‐band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub‐band wave function delocalization in the quantization direction.
Original languageEnglish
Title of host publicationPhysics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006
PublisherAmerican Institute of Physics (AIP)
Pages579-580
ISBN (Print)978-0-7354-0397-0
DOIs
Publication statusPublished - 2006
MoE publication typeA4 Article in a conference publication
Event28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

SeriesAIP Conference Proceedings
Number1
Volume893
ISSN0094-243X

Conference

Conference28th International Conference on the Physics of Semiconductors - ICPS 2006
CountryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • quantum wells

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