Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The gate bias dependency of conductivity σ is examined in two Si quantum wells with well thickness tw = 7 run and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non‐monotonic features as a function of gate voltages. We show that a strong minimum in σ occurs close to the threshold of second sub‐band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub‐band wave function delocalization in the quantization direction.
Original languageEnglish
Title of host publicationPhysics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006
PublisherAmerican Institute of Physics AIP
Pages579-580
ISBN (Print)978-0-7354-0397-0
DOIs
Publication statusPublished - 2006
MoE publication typeA4 Article in a conference publication
Event28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

SeriesAIP Conference Proceedings
Number1
Volume893
ISSN0094-243X

Conference

Conference28th International Conference on the Physics of Semiconductors - ICPS 2006
CountryAustria
CityVienna
Period24/07/0628/07/06

Fingerprint

quantum wells
conductivity
wave functions
thresholds
electric potential

Keywords

  • quantum wells

Cite this

Prunnila, M., Kivioja, J. M., & Ahopelto, J. (2006). Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells. In Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006 (pp. 579-580). American Institute of Physics AIP. AIP Conference Proceedings, No. 1, Vol.. 893 https://doi.org/10.1063/1.2730024
Prunnila, Mika ; Kivioja, J.M. ; Ahopelto, Jouni. / Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells. Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP, 2006. pp. 579-580 (AIP Conference Proceedings; No. 1, Vol. 893).
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abstract = "The gate bias dependency of conductivity σ is examined in two Si quantum wells with well thickness tw = 7 run and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non‐monotonic features as a function of gate voltages. We show that a strong minimum in σ occurs close to the threshold of second sub‐band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub‐band wave function delocalization in the quantization direction.",
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Prunnila, M, Kivioja, JM & Ahopelto, J 2006, Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells. in Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP, AIP Conference Proceedings, no. 1, vol. 893, pp. 579-580, 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730024

Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells. / Prunnila, Mika; Kivioja, J.M.; Ahopelto, Jouni.

Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP, 2006. p. 579-580 (AIP Conference Proceedings; No. 1, Vol. 893).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Y1 - 2006

N2 - The gate bias dependency of conductivity σ is examined in two Si quantum wells with well thickness tw = 7 run and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non‐monotonic features as a function of gate voltages. We show that a strong minimum in σ occurs close to the threshold of second sub‐band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub‐band wave function delocalization in the quantization direction.

AB - The gate bias dependency of conductivity σ is examined in two Si quantum wells with well thickness tw = 7 run and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non‐monotonic features as a function of gate voltages. We show that a strong minimum in σ occurs close to the threshold of second sub‐band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub‐band wave function delocalization in the quantization direction.

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Prunnila M, Kivioja JM, Ahopelto J. Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells. In Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP. 2006. p. 579-580. (AIP Conference Proceedings; No. 1, Vol. 893). https://doi.org/10.1063/1.2730024