Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer

R. Brenner, I. Hietanen, J. Lindgren, R. Orava, C. Rönnqvist, T. Schulman, T. Tuura, Mikael Andersson, Kari Leinonen, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.
Original languageEnglish
Pages (from-to)502-506
Number of pages5
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume315
Issue number1-3
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint

strip
wafers
Detectors
Silicon
detectors
silicon
readout
Silicon wafers
Polysilicon
resistors
Resistors
electrical measurement
Light sources
capacitors
Capacitors
Lighting
illumination
Electrodes
electrodes
Lasers

Cite this

Brenner, R. ; Hietanen, I. ; Lindgren, J. ; Orava, R. ; Rönnqvist, C. ; Schulman, T. ; Tuura, T. ; Andersson, Mikael ; Leinonen, Kari ; Ronkainen, Hannu. / Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1992 ; Vol. 315, No. 1-3. pp. 502-506.
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abstract = "Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.",
author = "R. Brenner and I. Hietanen and J. Lindgren and R. Orava and C. R{\"o}nnqvist and T. Schulman and T. Tuura and Mikael Andersson and Kari Leinonen and Hannu Ronkainen",
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Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer. / Brenner, R.; Hietanen, I.; Lindgren, J.; Orava, R.; Rönnqvist, C.; Schulman, T.; Tuura, T.; Andersson, Mikael; Leinonen, Kari; Ronkainen, Hannu.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 315, No. 1-3, 1992, p. 502-506.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer

AU - Brenner, R.

AU - Hietanen, I.

AU - Lindgren, J.

AU - Orava, R.

AU - Rönnqvist, C.

AU - Schulman, T.

AU - Tuura, T.

AU - Andersson, Mikael

AU - Leinonen, Kari

AU - Ronkainen, Hannu

PY - 1992

Y1 - 1992

N2 - Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.

AB - Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.

U2 - 10.1016/0168-9002(92)90754-R

DO - 10.1016/0168-9002(92)90754-R

M3 - Article

VL - 315

SP - 502

EP - 506

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-3

ER -