Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer

R. Brenner, I. Hietanen, J. Lindgren, R. Orava, C. Rönnqvist, T. Schulman, T. Tuura, Mikael Andersson, Kari Leinonen, Hannu Ronkainen

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    Abstract

    Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.
    Original languageEnglish
    Pages (from-to)502-506
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume315
    Issue number1-3
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

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