Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 1992|
|MoE publication type||A1 Journal article-refereed|
Brenner, R., Hietanen, I., Lindgren, J., Orava, R., Rönnqvist, C., Schulman, T., Tuura, T., Andersson, M., Leinonen, K., & Ronkainen, H. (1992). Double-sided capacitively coupled silicon strip detectors on a 100 mm wafer. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 315(1-3), 502-506. https://doi.org/10.1016/0168-9002(92)90754-R