Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses

Kimmo Solehmainen; Timo Aalto; James Dekker; Markku Kapulainen; Mikko Harjanne; Kaupo Kukli; Päivi Heimala; Kai Kolari; Markku Leskelä

doi:10.1109/JLT.2005.857750

Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses

Kimmo Solehmainen, Timo Aalto, James Dekker, Markku Kapulainen, Mikko Harjanne, Kaupo Kukli, Päivi Heimala, Kai Kolari, Markku Leskelä

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Research output: Contribution to journal › Article › Scientific › peer-review

31 Citations (Scopus)

Abstract

Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).

Original language	English
Pages (from-to)	3875-3880
Journal	Journal of Lightwave Technology
Volume	23
Issue number	11
DOIs	https://doi.org/10.1109/JLT.2005.857750
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

atomic layer deposition (ALD)
integrated optics
optical device fabrication
optical losses
optical waveguides
silicon-on-insulator (SOI) technology

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Solehmainen, K., Aalto, T., Dekker, J., Kapulainen, M., Harjanne, M., Kukli, K., Heimala, P., Kolari, K., & Leskelä, M. (2005). Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses. Journal of Lightwave Technology, 23(11), 3875-3880. https://doi.org/10.1109/JLT.2005.857750

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title = "Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses",

abstract = "Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).",

keywords = "atomic layer deposition (ALD), integrated optics, optical device fabrication, optical losses, optical waveguides, silicon-on-insulator (SOI) technology",

author = "Kimmo Solehmainen and Timo Aalto and James Dekker and Markku Kapulainen and Mikko Harjanne and Kaupo Kukli and P{\"a}ivi Heimala and Kai Kolari and Markku Leskel{\"a}",

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year = "2005",

doi = "10.1109/JLT.2005.857750",

language = "English",

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pages = "3875--3880",

journal = "Journal of Lightwave Technology",

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publisher = "IEEE Institute of Electrical and Electronic Engineers",

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Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses. / Solehmainen, Kimmo; Aalto, Timo ; Dekker, James ; Kapulainen, Markku ; Harjanne, Mikko; Kukli, Kaupo; Heimala, Päivi; Kolari, Kai; Leskelä, Markku.

In: Journal of Lightwave Technology, Vol. 23, No. 11, 2005, p. 3875-3880.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses

AU - Solehmainen, Kimmo

AU - Aalto, Timo

AU - Dekker, James

AU - Kapulainen, Markku

AU - Harjanne, Mikko

AU - Kukli, Kaupo

AU - Heimala, Päivi

AU - Kolari, Kai

AU - Leskelä, Markku

N1 - Project code: T4SU00310

PY - 2005

Y1 - 2005

N2 - Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).

AB - Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).

KW - atomic layer deposition (ALD)

KW - integrated optics

KW - optical device fabrication

KW - optical losses

KW - optical waveguides

KW - silicon-on-insulator (SOI) technology

U2 - 10.1109/JLT.2005.857750

DO - 10.1109/JLT.2005.857750

M3 - Article

VL - 23

SP - 3875

EP - 3880

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 11

ER -