Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses

Kimmo Solehmainen, Timo Aalto, James Dekker, Markku Kapulainen, Mikko Harjanne, Kaupo Kukli, Päivi Heimala, Kai Kolari, Markku Leskelä

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)

Abstract

Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).
Original languageEnglish
Pages (from-to)3875-3880
JournalJournal of Lightwave Technology
Volume23
Issue number11
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

insulators
etching
waveguides
fibers
propagation
silicon
antireflection coatings
atomic layer epitaxy
wavelengths
ions

Keywords

  • atomic layer deposition (ALD)
  • integrated optics
  • optical device fabrication
  • optical losses
  • optical waveguides
  • silicon-on-insulator (SOI) technology

Cite this

@article{694baedbd6604812a0a29b3fb09fddb4,
title = "Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses",
abstract = "Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).",
keywords = "atomic layer deposition (ALD), integrated optics, optical device fabrication, optical losses, optical waveguides, silicon-on-insulator (SOI) technology",
author = "Kimmo Solehmainen and Timo Aalto and James Dekker and Markku Kapulainen and Mikko Harjanne and Kaupo Kukli and P{\"a}ivi Heimala and Kai Kolari and Markku Leskel{\"a}",
note = "Project code: T4SU00310",
year = "2005",
doi = "10.1109/JLT.2005.857750",
language = "English",
volume = "23",
pages = "3875--3880",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
number = "11",

}

Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses. / Solehmainen, Kimmo; Aalto, Timo; Dekker, James; Kapulainen, Markku; Harjanne, Mikko; Kukli, Kaupo; Heimala, Päivi; Kolari, Kai; Leskelä, Markku.

In: Journal of Lightwave Technology, Vol. 23, No. 11, 2005, p. 3875-3880.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses

AU - Solehmainen, Kimmo

AU - Aalto, Timo

AU - Dekker, James

AU - Kapulainen, Markku

AU - Harjanne, Mikko

AU - Kukli, Kaupo

AU - Heimala, Päivi

AU - Kolari, Kai

AU - Leskelä, Markku

N1 - Project code: T4SU00310

PY - 2005

Y1 - 2005

N2 - Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).

AB - Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13/spl plusmn/0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).

KW - atomic layer deposition (ALD)

KW - integrated optics

KW - optical device fabrication

KW - optical losses

KW - optical waveguides

KW - silicon-on-insulator (SOI) technology

U2 - 10.1109/JLT.2005.857750

DO - 10.1109/JLT.2005.857750

M3 - Article

VL - 23

SP - 3875

EP - 3880

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 11

ER -