Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors

Markku Sipilä, Veikko Porra, Martti Valtonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.
    Original languageEnglish
    Title of host publication1988 IEEE International Symposium on Circuits and Systems (ISCAS)
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages401-404
    DOIs
    Publication statusPublished - 1988
    MoE publication typeA4 Article in a conference publication
    EventIEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 - Espoo, Finland
    Duration: 6 Jun 19889 Jun 1988

    Conference

    ConferenceIEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88
    CountryFinland
    CityEspoo
    Period6/06/889/06/88

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  • Cite this

    Sipilä, M., Porra, V., & Valtonen, M. (1988). Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors. In 1988 IEEE International Symposium on Circuits and Systems (ISCAS) (pp. 401-404). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ISCAS.1988.14949