Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors

Markku Sipilä; Veikko Porra; Martti Valtonen

doi:10.1109/ISCAS.1988.14949

Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors

Markku Sipilä, Veikko Porra, Martti Valtonen

Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.

Original language	English
Title of host publication	1988 IEEE International Symposium on Circuits and Systems (ISCAS)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	401-404
DOIs	https://doi.org/10.1109/ISCAS.1988.14949
Publication status	Published - 1988
MoE publication type	A4 Article in a conference publication
Event	IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 - Espoo, Finland Duration: 6 Jun 1988 → 9 Jun 1988

Conference

Conference	IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88
Country/Territory	Finland
City	Espoo
Period	6/06/88 → 9/06/88

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10.1109/ISCAS.1988.14949

Cite this

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title = "Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors",

abstract = "An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.",

author = "Markku Sipil{\"a} and Veikko Porra and Martti Valtonen",

year = "1988",

doi = "10.1109/ISCAS.1988.14949",

language = "English",

pages = "401--404",

booktitle = "1988 IEEE International Symposium on Circuits and Systems (ISCAS)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88 ; Conference date: 06-06-1988 Through 09-06-1988",

}

Sipilä, M, Porra, V & Valtonen, M 1988, Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors. in 1988 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE Institute of Electrical and Electronic Engineers, pp. 401-404, IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88, Espoo, Finland, 6/06/88. https://doi.org/10.1109/ISCAS.1988.14949

Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors. / Sipilä, Markku; Porra, Veikko; Valtonen, Martti.
1988 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE Institute of Electrical and Electronic Engineers, 1988. p. 401-404.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors

AU - Sipilä, Markku

AU - Porra, Veikko

AU - Valtonen, Martti

PY - 1988

Y1 - 1988

N2 - An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.

AB - An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.

U2 - 10.1109/ISCAS.1988.14949

DO - 10.1109/ISCAS.1988.14949

M3 - Conference article in proceedings

SP - 401

EP - 404

BT - 1988 IEEE International Symposium on Circuits and Systems (ISCAS)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE Symposium on Integrated Circuits and Systems 1988, ISCAS 88

Y2 - 6 June 1988 through 9 June 1988

ER -

Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors

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