Dynamically tracking the strain across the metal-insulator transition in VO2 measured using electromechanical resonators

Pritesh Parikh, Chitraleema Chakraborty, T. S. Abhilash, Shamashis Sengupta, Chun Cheng, Junqiao Wu, Mandar M. Deshmukh

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)


We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase in resistance. The resonant frequency increases by ∼7 MHz with the growth of metallic domain (M2-R transition) due to the development of tensile strain in the nanobeam. Our approach to dynamically track strain coupled with simultaneous resistance and resonance measurements using electromechanical resonators enables the study of lattice-involved interactions more precisely than static strain measurements. This technique can be extended to other phase change systems important for device applications.

Original languageEnglish
Pages (from-to)4685-4689
Number of pages5
JournalNano Letters
Issue number10
Publication statusPublished - 18 Oct 2013
MoE publication typeA1 Journal article-refereed


  • lattice softening
  • metal-insulator transition
  • NEMS
  • phase transition
  • VO


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