Dynamics of Bloch oscillating transistor near the bifurcation threshold

J. Sarkar, A. Puska, Juha Hassel, P.J. Hakonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.
    Original languageEnglish
    Article number224514
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume87
    Issue number22
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

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    Transistors
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    curves
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    Cite this

    Sarkar, J. ; Puska, A. ; Hassel, Juha ; Hakonen, P.J. / Dynamics of Bloch oscillating transistor near the bifurcation threshold. In: Physical Review B: Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 22.
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    abstract = "The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.",
    author = "J. Sarkar and A. Puska and Juha Hassel and P.J. Hakonen",
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    Dynamics of Bloch oscillating transistor near the bifurcation threshold. / Sarkar, J.; Puska, A.; Hassel, Juha; Hakonen, P.J.

    In: Physical Review B: Condensed Matter and Materials Physics, Vol. 87, No. 22, 224514, 2013.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Dynamics of Bloch oscillating transistor near the bifurcation threshold

    AU - Sarkar, J.

    AU - Puska, A.

    AU - Hassel, Juha

    AU - Hakonen, P.J.

    PY - 2013

    Y1 - 2013

    N2 - The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.

    AB - The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.

    U2 - 10.1103/PhysRevB.87.224514

    DO - 10.1103/PhysRevB.87.224514

    M3 - Article

    VL - 87

    JO - Physical Review B

    JF - Physical Review B

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