Dynamics of Bloch oscillating transistor near the bifurcation threshold

J. Sarkar, A. Puska, Juha Hassel, P.J. Hakonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.
Original languageEnglish
Article number224514
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume87
Issue number22
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Transistors
transistors
Tuning
Detectors
thresholds
tendencies
amplifiers
tuning
augmentation
detectors
curves
energy

Cite this

Sarkar, J. ; Puska, A. ; Hassel, Juha ; Hakonen, P.J. / Dynamics of Bloch oscillating transistor near the bifurcation threshold. In: Physical Review B: Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 22.
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Dynamics of Bloch oscillating transistor near the bifurcation threshold. / Sarkar, J.; Puska, A.; Hassel, Juha; Hakonen, P.J.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 87, No. 22, 224514, 2013.

Research output: Contribution to journalArticleScientificpeer-review

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AB - The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.

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