Edgeless planar semiconductor sensors for a Medipix3-based radiography detector

M.J. Bosma, E. Heijne, Juha Kalliopuska, J. Visser, N. Koffeman

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Abstract

We study the influence of active edges on the response of edge pixels by comparing simulations of the electrostatic-potential distribution to position-defined measurements on the energy deposition. A laser setup was used to measure the edge-pixel response function and shows the sensitive edge is only about 2 μm from the physical edge. 3D reconstruction of tracks from high-energy pions and muons, produced at the SPS H6 test beam facility at CERN, enabled to relate the energy deposition at edge pixels to the particle's interaction depth. A clear correlation is observed between the simulated electric-field distortion and the reconstructed interaction-depth dependent effective size.
Original languageEnglish
Article numberC11019
JournalJournal of Instrumentation
Volume6
Issue number11
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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Keywords

  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
  • hybeid detectors
  • particle tracking detectors (Solid-state detectors)
  • X-ray radiography and digital radiography (DR)

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