EEPROM cell design for molybdenum gate analog BECMOS process

Hannu Ronkainen (Corresponding Author), Joni Mellin

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.
    Original languageEnglish
    Pages (from-to)133 - 137
    Number of pages5
    JournalPhysica Scripta
    VolumeT114
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed
    Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
    Duration: 25 Aug 200327 Aug 2003

    Fingerprint Dive into the research topics of 'EEPROM cell design for molybdenum gate analog BECMOS process'. Together they form a unique fingerprint.

  • Cite this