EEPROM cell design for molybdenum gate analog BECMOS process

Hannu Ronkainen (Corresponding Author), Joni Mellin

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.
    Original languageEnglish
    Pages (from-to)133 - 137
    Number of pages5
    JournalPhysica Scripta
    VolumeT114
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed
    Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
    Duration: 25 Aug 200327 Aug 2003

    Fingerprint

    molybdenum
    analogs
    Capacitor
    Analogue
    Cell
    capacitors
    cells
    Injector
    application specific integrated circuits
    injectors
    floating
    Charge
    Design

    Cite this

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    title = "EEPROM cell design for molybdenum gate analog BECMOS process",
    abstract = "A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.",
    author = "Hannu Ronkainen and Joni Mellin",
    note = "Project code: T4SU00183",
    year = "2004",
    doi = "10.1088/0031-8949/2004/T114/034",
    language = "English",
    volume = "T114",
    pages = "133 -- 137",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",

    }

    EEPROM cell design for molybdenum gate analog BECMOS process. / Ronkainen, Hannu (Corresponding Author); Mellin, Joni.

    In: Physica Scripta, Vol. T114, 2004, p. 133 - 137.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - EEPROM cell design for molybdenum gate analog BECMOS process

    AU - Ronkainen, Hannu

    AU - Mellin, Joni

    N1 - Project code: T4SU00183

    PY - 2004

    Y1 - 2004

    N2 - A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

    AB - A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

    U2 - 10.1088/0031-8949/2004/T114/034

    DO - 10.1088/0031-8949/2004/T114/034

    M3 - Article

    VL - T114

    SP - 133

    EP - 137

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    ER -