EEPROM cell design for molybdenum gate analog BECMOS process

Hannu Ronkainen (Corresponding Author), Joni Mellin

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.
Original languageEnglish
Pages (from-to)133 - 137
Number of pages5
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 25 Aug 200327 Aug 2003

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molybdenum
analogs
Capacitor
Analogue
Cell
capacitors
cells
Injector
application specific integrated circuits
injectors
floating
Charge
Design

Cite this

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title = "EEPROM cell design for molybdenum gate analog BECMOS process",
abstract = "A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.",
author = "Hannu Ronkainen and Joni Mellin",
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EEPROM cell design for molybdenum gate analog BECMOS process. / Ronkainen, Hannu (Corresponding Author); Mellin, Joni.

In: Physica Scripta, Vol. T114, 2004, p. 133 - 137.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Ronkainen, Hannu

AU - Mellin, Joni

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AB - A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

U2 - 10.1088/0031-8949/2004/T114/034

DO - 10.1088/0031-8949/2004/T114/034

M3 - Article

VL - T114

SP - 133

EP - 137

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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