A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.
|Pages (from-to)||133 - 137|
|Number of pages||5|
|Publication status||Published - 2004|
|MoE publication type||A1 Journal article-refereed|
|Event||20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland|
Duration: 25 Aug 2003 → 27 Aug 2003