EEPROM cell design for molybdenum gate analog BECMOS process

Hannu Ronkainen; Joni Mellin

doi:10.1088/0031-8949/2004/T114/034

EEPROM cell design for molybdenum gate analog BECMOS process

Hannu Ronkainen^*
, Joni Mellin

^*Corresponding author for this work

Micro Analog Systems Oy

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

Original language	English
Pages (from-to)	133-137
Journal	Physica Scripta Topical Issues
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/034
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed
Event	20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland Duration: 25 Aug 2003 → 27 Aug 2003

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10.1088/0031-8949/2004/T114/034

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@article{8f14e470b1fe46fdbc71207b65751a4c,

title = "EEPROM cell design for molybdenum gate analog BECMOS process",

abstract = "A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.",

author = "Hannu Ronkainen and Joni Mellin",

note = "Project code: T4SU00183; 20th Nordic Semiconductor Meeting, NSM20 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2004",

doi = "10.1088/0031-8949/2004/T114/034",

language = "English",

volume = "T114",

pages = "133--137",

journal = "Physica Scripta Topical Issues",

issn = "0281-1847",

publisher = "Institute of Physics IOP",

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T1 - EEPROM cell design for molybdenum gate analog BECMOS process

AU - Ronkainen, Hannu

AU - Mellin, Joni

N1 - Project code: T4SU00183

PY - 2004

Y1 - 2004

N2 - A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

AB - A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This type of memory device can be embedded into an analog MOS technology with capacitors. In this article the feasibility of the structure for small scale embedded memory is studied with 1.5µm analog ASIC molybdenum gate technology.

U2 - 10.1088/0031-8949/2004/T114/034

DO - 10.1088/0031-8949/2004/T114/034

M3 - Article

SN - 0281-1847

VL - T114

SP - 133

EP - 137

JO - Physica Scripta Topical Issues

JF - Physica Scripta Topical Issues

T2 - 20th Nordic Semiconductor Meeting, NSM20

Y2 - 25 August 2003 through 27 August 2003

ER -

EEPROM cell design for molybdenum gate analog BECMOS process

Abstract

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