EEPROM cell design for molybdenum gate analog BECMOS process

Keyphrases

• Analog ASIC 50%
• Capacitors 50%
• Cell Design 100%
• Charge Injection Devices 50%
• EEPROM 100%
• Embedded Memory 50%
• Floating Capacitor 50%
• Gating Technology 50%
• Memory Device 50%
• Molybdenum 100%
• MOS Technology 50%
• Non-volatile Memory 50%

INIS

• capacitors 100%
• charges 50%
• design 100%
• memory devices 50%
• molybdenum 100%
• silicon oxides 100%

Computer Science

• Application Specific Integrated Circuit 100%
• embedded memory 100%
• Non-Volatile Memory 100%