Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

Terho Kololuoma, Juha Rantala

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

Original languageEnglish
Pages (from-to)172 - 173
Number of pages2
JournalElectronics Letters
Volume36
Issue number2
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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