Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

Terho Kololuoma; Juha Rantala

doi:10.1049/el:20000174

Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO₂ thin films

Terho Kololuoma, Juha Rantala

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Abstract

The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl₄·4H₂O and SbCl₃ precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

Original language	English
Pages (from-to)	172 - 173
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1049/el:20000174
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

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title = "Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films",

abstract = "The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.",

author = "Terho Kololuoma and Juha Rantala",

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journal = "Electronics Letters",

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T1 - Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

AU - Kololuoma, Terho

AU - Rantala, Juha

PY - 2000

Y1 - 2000

N2 - The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

AB - The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

U2 - 10.1049/el:20000174

DO - 10.1049/el:20000174

M3 - Article

SN - 0013-5194

VL - 36

SP - 172

EP - 173

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

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Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO₂ thin films