Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

Terho Kololuoma, Juha Rantala

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

Original languageEnglish
Pages (from-to)172 - 173
Number of pages2
JournalElectronics Letters
Volume36
Issue number2
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Fingerprint

Sol-gels
Argon
Plasmas
Thin films
Tin dioxide
Antimony
Sol-gel process
Fabrication
Electric Conductivity

Cite this

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title = "Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films",
abstract = "The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290{\%}, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.",
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pages = "172 -- 173",
journal = "Electronics Letters",
issn = "0013-5194",
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Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films. / Kololuoma, Terho; Rantala, Juha.

In: Electronics Letters, Vol. 36, No. 2, 2000, p. 172 - 173.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

AU - Kololuoma, Terho

AU - Rantala, Juha

PY - 2000

Y1 - 2000

N2 - The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

AB - The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

U2 - 10.1049/el:20000174

DO - 10.1049/el:20000174

M3 - Article

VL - 36

SP - 172

EP - 173

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -