Effect of argon plasma treatment on conductivity of sol-gel fabricated Sb-doped SnO2 thin films

Terho Kololuoma, Juha Rantala

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.

    Original languageEnglish
    Pages (from-to)172 - 173
    Number of pages2
    JournalElectronics Letters
    Volume36
    Issue number2
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

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