Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- Heli Seppänen*
- , Igor Prozheev
- , Christoffer Kauppinen
- , Sami Suihkonen
- , Kenichiro Mizohata
- , Harri Lipsanen
*Corresponding author for this work
- Aalto University
- University of Helsinki
Research output: Contribution to journal › Article › Scientific › peer-review
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