Effect of cell geometry on the 1000 V IGBT

Simo Eränen, Martti Blomberg, Gyözö Drozdy, Marko Grönlund, S. Kiihamäki

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	14th Nordic Semiconductor Meeting
Editors	Ole Hansen
Place of Publication	Lyngby
Publisher	Technical University of Denmark DTU
Pages	427-431
ISBN (Print)	978-87-8754-832-8, 978-87-9835-460-4
Publication status	Published - 1990
MoE publication type	A4 Article in a conference publication
Event	14th Nordic Semiconductor Meeting - Århus, Denmark Duration: 17 Jun 1990 → 20 Jun 1990

Seminar	14th Nordic Semiconductor Meeting
Country/Territory	Denmark
City	Århus
Period	17/06/90 → 20/06/90

Cite this

@inproceedings{ab1b8c536c464f2a9406f8255fa8385a,

title = "Effect of cell geometry on the 1000 V IGBT",

author = "Simo Er{\"a}nen and Martti Blomberg and Gy{\"o}z{\"o} Drozdy and Marko Gr{\"o}nlund and S. Kiiham{\"a}ki",

year = "1990",

language = "English",

isbn = "978-87-8754-832-8",

pages = "427--431",

editor = "Ole Hansen",

booktitle = "14th Nordic Semiconductor Meeting",

publisher = "Technical University of Denmark DTU",

address = "Denmark",

note = "14th Nordic Semiconductor Meeting ; Conference date: 17-06-1990 Through 20-06-1990",

}

TY - GEN

T1 - Effect of cell geometry on the 1000 V IGBT

AU - Eränen, Simo

AU - Blomberg, Martti

AU - Drozdy, Gyözö

AU - Grönlund, Marko

AU - Kiihamäki, S.

PY - 1990

Y1 - 1990

M3 - Conference article in proceedings

SN - 978-87-8754-832-8

SN - 978-87-9835-460-4

SP - 427

EP - 431

BT - 14th Nordic Semiconductor Meeting

A2 - Hansen, Ole

PB - Technical University of Denmark DTU

CY - Lyngby

T2 - 14th Nordic Semiconductor Meeting

Y2 - 17 June 1990 through 20 June 1990

ER -