Effect of cell geometry on the 1000 V IGBT

Simo Eränen, Martti Blomberg, Gyözö Drozdy, Marko Grönlund, S. Kiihamäki

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publication14th Nordic Semiconductor Meeting
    EditorsOle Hansen
    Place of PublicationLyngby
    PublisherDanmarks Tekniske Universitet
    Pages427-431
    ISBN (Print)978-87-8754-832-8, 978-87-9835-460-4
    Publication statusPublished - 1990
    MoE publication typeA4 Article in a conference publication
    Event14th Nordic Semiconductor Meeting - Århus, Denmark
    Duration: 17 Jun 199020 Jun 1990

    Seminar

    Seminar14th Nordic Semiconductor Meeting
    CountryDenmark
    CityÅrhus
    Period17/06/9020/06/90

    Cite this

    Eränen, S., Blomberg, M., Drozdy, G., Grönlund, M., & Kiihamäki, S. (1990). Effect of cell geometry on the 1000 V IGBT. In O. Hansen (Ed.), 14th Nordic Semiconductor Meeting (pp. 427-431). Danmarks Tekniske Universitet.