Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	727-729
Journal	Physica Status Solidi C: Current Topics in Solid State Physics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201100391
Publication status	Published - 2012
MoE publication type	A1 Journal article-refereed

Access to Document

@article{6228afceb6434699a42e070671c033da,

title = "Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells",

author = "O. Kopylov and R. Shirazi and Olli Svensk and Sami Suihkonen and Sakari Sintonen and Markku Sopanen and Beata Kardynal",

year = "2012",

doi = "10.1002/pssc.201100391",

language = "English",

volume = "9",

pages = "727--729",

journal = "Physica Status Solidi C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

TY - JOUR

T1 - Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

AU - Kopylov, O.

AU - Shirazi, R.

AU - Svensk, Olli

AU - Suihkonen, Sami

AU - Sintonen, Sakari

AU - Sopanen, Markku

AU - Kardynal, Beata

PY - 2012

Y1 - 2012

U2 - 10.1002/pssc.201100391

DO - 10.1002/pssc.201100391

M3 - Article

SN - 1862-6351

VL - 9

SP - 727

EP - 729

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

IS - 3-4

ER -