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Effect of growth conditions on electrical properties of Mg-doped p-GaN
Olli Svensk
*
,
Sami Suihkonen
, Teemu Lang
, Harri Lipsanen
, Markku Sopanen
, Maxim Odnoblyudov
, Vladislav Bougrov
*
Corresponding author for this work
Not published at VTT
Ioffe Institute
Helsinki University of Technology
Research output
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INIS
doped materials
100%
growth
100%
electrical properties
100%
gases
100%
carriers
100%
gallium nitrides
100%
layers
40%
comparative evaluations
20%
efficiency
20%
chemical vapor deposition
20%
precursor
20%
atmospheres
20%
flow rate
20%
sims
20%
hall effect
20%
Keyphrases
Electrical Properties
100%
Carrier Gas
100%
Growth Conditions
100%
Mg Doping
100%
P-GaN
100%
Mg Activation
20%
SIMS Analysis
20%
Structural Quality
20%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Hall Effect Measurement
20%
Post-growth
20%
Vertical Flow
20%
Growth Atmosphere
20%
Activation Conditions
20%
Mg Incorporation
20%
Close-coupled Showerhead
20%
Engineering
Carrier Gas
100%
Growth Condition
100%
Flow Rate
20%
Flow Velocity
20%
Material Science
Secondary Ion Mass Spectrometry
100%