Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

F. Tuomisto (Corresponding Author), K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, Jari Likonen

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    Abstract

    We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.
    Original languageEnglish
    Article number031915
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number3
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Keywords

    • gallium
    • gallium compounds
    • iii-v semiconductors
    • wide band gap semiconductors
    • semiconductor epitaxial layers
    • semiconductor growth
    • vapour phase epitaxial growth
    • impurity-vacancy interactions
    • vacancies (crystal)
    • positron annihilation
    • secondary ion mass spectra
    • photoluminescence

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  • Cite this

    Tuomisto, F., Saarinen, K., Lucznik, B., Grzegory, I., Teisseyre, H., Suski, T., Porowski, S., Hageman, P. R., & Likonen, J. (2005). Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. Applied Physics Letters, 86(3), [031915]. https://doi.org/10.1063/1.1854745