Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

F. Tuomisto (Corresponding Author), K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    77 Citations (Scopus)

    Abstract

    We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.
    Original languageEnglish
    Article number031915
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number3
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    vapor phase epitaxy
    hydrides
    polarity
    impurities
    defects
    positron annihilation
    point defects
    secondary ion mass spectrometry
    crystals
    positrons
    photoluminescence
    life (durability)

    Keywords

    • gallium
    • gallium compounds
    • iii-v semiconductors
    • wide band gap semiconductors
    • semiconductor epitaxial layers
    • semiconductor growth
    • vapour phase epitaxial growth
    • impurity-vacancy interactions
    • vacancies (crystal)
    • positron annihilation
    • secondary ion mass spectra
    • photoluminescence

    Cite this

    Tuomisto, F. ; Saarinen, K. ; Lucznik, B. ; Grzegory, I. ; Teisseyre, H. ; Suski, T. ; Porowski, S. ; Hageman, P. R. ; Likonen, Jari. / Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. In: Applied Physics Letters. 2005 ; Vol. 86, No. 3.
    @article{25542bc78065420881148eca9e80d320,
    title = "Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN",
    abstract = "We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.",
    keywords = "gallium, gallium compounds, iii-v semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, semiconductor growth, vapour phase epitaxial growth, impurity-vacancy interactions, vacancies (crystal), positron annihilation, secondary ion mass spectra, photoluminescence",
    author = "F. Tuomisto and K. Saarinen and B. Lucznik and I. Grzegory and H. Teisseyre and T. Suski and S. Porowski and Hageman, {P. R.} and Jari Likonen",
    year = "2005",
    doi = "10.1063/1.1854745",
    language = "English",
    volume = "86",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "3",

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    Tuomisto, F, Saarinen, K, Lucznik, B, Grzegory, I, Teisseyre, H, Suski, T, Porowski, S, Hageman, PR & Likonen, J 2005, 'Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN', Applied Physics Letters, vol. 86, no. 3, 031915. https://doi.org/10.1063/1.1854745

    Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. / Tuomisto, F. (Corresponding Author); Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P. R.; Likonen, Jari.

    In: Applied Physics Letters, Vol. 86, No. 3, 031915, 2005.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

    AU - Tuomisto, F.

    AU - Saarinen, K.

    AU - Lucznik, B.

    AU - Grzegory, I.

    AU - Teisseyre, H.

    AU - Suski, T.

    AU - Porowski, S.

    AU - Hageman, P. R.

    AU - Likonen, Jari

    PY - 2005

    Y1 - 2005

    N2 - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

    AB - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

    KW - gallium

    KW - gallium compounds

    KW - iii-v semiconductors

    KW - wide band gap semiconductors

    KW - semiconductor epitaxial layers

    KW - semiconductor growth

    KW - vapour phase epitaxial growth

    KW - impurity-vacancy interactions

    KW - vacancies (crystal)

    KW - positron annihilation

    KW - secondary ion mass spectra

    KW - photoluminescence

    U2 - 10.1063/1.1854745

    DO - 10.1063/1.1854745

    M3 - Article

    VL - 86

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 3

    M1 - 031915

    ER -