Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

F. Tuomisto (Corresponding Author), K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

76 Citations (Scopus)

Abstract

We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.
Original languageEnglish
Article number031915
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

vapor phase epitaxy
hydrides
polarity
impurities
defects
positron annihilation
point defects
secondary ion mass spectrometry
crystals
positrons
photoluminescence
life (durability)

Keywords

  • gallium
  • gallium compounds
  • iii-v semiconductors
  • wide band gap semiconductors
  • semiconductor epitaxial layers
  • semiconductor growth
  • vapour phase epitaxial growth
  • impurity-vacancy interactions
  • vacancies (crystal)
  • positron annihilation
  • secondary ion mass spectra
  • photoluminescence

Cite this

Tuomisto, F. ; Saarinen, K. ; Lucznik, B. ; Grzegory, I. ; Teisseyre, H. ; Suski, T. ; Porowski, S. ; Hageman, P. R. ; Likonen, Jari. / Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. In: Applied Physics Letters. 2005 ; Vol. 86, No. 3.
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abstract = "We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.",
keywords = "gallium, gallium compounds, iii-v semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, semiconductor growth, vapour phase epitaxial growth, impurity-vacancy interactions, vacancies (crystal), positron annihilation, secondary ion mass spectra, photoluminescence",
author = "F. Tuomisto and K. Saarinen and B. Lucznik and I. Grzegory and H. Teisseyre and T. Suski and S. Porowski and Hageman, {P. R.} and Jari Likonen",
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Tuomisto, F, Saarinen, K, Lucznik, B, Grzegory, I, Teisseyre, H, Suski, T, Porowski, S, Hageman, PR & Likonen, J 2005, 'Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN', Applied Physics Letters, vol. 86, no. 3, 031915. https://doi.org/10.1063/1.1854745

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. / Tuomisto, F. (Corresponding Author); Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P. R.; Likonen, Jari.

In: Applied Physics Letters, Vol. 86, No. 3, 031915, 2005.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

AU - Tuomisto, F.

AU - Saarinen, K.

AU - Lucznik, B.

AU - Grzegory, I.

AU - Teisseyre, H.

AU - Suski, T.

AU - Porowski, S.

AU - Hageman, P. R.

AU - Likonen, Jari

PY - 2005

Y1 - 2005

N2 - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

AB - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

KW - gallium

KW - gallium compounds

KW - iii-v semiconductors

KW - wide band gap semiconductors

KW - semiconductor epitaxial layers

KW - semiconductor growth

KW - vapour phase epitaxial growth

KW - impurity-vacancy interactions

KW - vacancies (crystal)

KW - positron annihilation

KW - secondary ion mass spectra

KW - photoluminescence

U2 - 10.1063/1.1854745

DO - 10.1063/1.1854745

M3 - Article

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031915

ER -