Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

F. Tuomisto; K. Saarinen; B. Lucznik; I. Grzegory; H. Teisseyre; T. Suski; S. Porowski; P. R. Hageman; Jari Likonen

doi:10.1063/1.1854745

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

F. Tuomisto (Corresponding Author), K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, Jari Likonen

Research output: Contribution to journal › Article › Scientific › peer-review

105 Citations (Scopus)

Abstract

We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

Original language	English
Article number	031915
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.1854745
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

gallium
gallium compounds
iii-v semiconductors
wide band gap semiconductors
semiconductor epitaxial layers
semiconductor growth
vapour phase epitaxial growth
impurity-vacancy interactions
vacancies (crystal)
positron annihilation
secondary ion mass spectra
photoluminescence

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10.1063/1.1854745

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title = "Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN",

abstract = "We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.",

keywords = "gallium, gallium compounds, iii-v semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, semiconductor growth, vapour phase epitaxial growth, impurity-vacancy interactions, vacancies (crystal), positron annihilation, secondary ion mass spectra, photoluminescence",

author = "F. Tuomisto and K. Saarinen and B. Lucznik and I. Grzegory and H. Teisseyre and T. Suski and S. Porowski and Hageman, {P. R.} and Jari Likonen",

year = "2005",

doi = "10.1063/1.1854745",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "3",

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TY - JOUR

T1 - Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

AU - Tuomisto, F.

AU - Saarinen, K.

AU - Lucznik, B.

AU - Grzegory, I.

AU - Teisseyre, H.

AU - Suski, T.

AU - Porowski, S.

AU - Hageman, P. R.

AU - Likonen, Jari

PY - 2005

Y1 - 2005

N2 - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

AB - We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

KW - gallium

KW - gallium compounds

KW - iii-v semiconductors

KW - wide band gap semiconductors

KW - semiconductor epitaxial layers

KW - semiconductor growth

KW - vapour phase epitaxial growth

KW - impurity-vacancy interactions

KW - vacancies (crystal)

KW - positron annihilation

KW - secondary ion mass spectra

KW - photoluminescence

U2 - 10.1063/1.1854745

DO - 10.1063/1.1854745

M3 - Article

SN - 0003-6951

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031915

ER -

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Abstract

Keywords

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