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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
F. Tuomisto (Corresponding Author), K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, Jari Likonen
Research output: Contribution to journal › Article › Scientific › peer-review
107
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(Scopus)