Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

Suvi Särkijärvi; Sakari Sintonen; Filip Tuomisto; Markus Bosund; Sami Suihkonen; Harri Lipsanen

doi:10.1016/j.jcrysgro.2014.04.006

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

Suvi Särkijärvi, Sakari Sintonen, Filip Tuomisto, Markus Bosund, Sami Suihkonen, Harri Lipsanen

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	18-22
Number of pages	5
Journal	Journal of Crystal Growth
Volume	398
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.04.006
Publication status	Published - 15 Jul 2014
MoE publication type	A1 Journal article-refereed

Keywords

ALD
positron
vacancy
ZnO

Access to Document

10.1016/j.jcrysgro.2014.04.006

Cite this

@article{ffc740b0d3f44fb0be9c057e03e5f608,

title = "Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD",

keywords = "ALD, positron, vacancy, ZnO",

author = "Suvi S{\"a}rkij{\"a}rvi and Sakari Sintonen and Filip Tuomisto and Markus Bosund and Sami Suihkonen and Harri Lipsanen",

year = "2014",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2014.04.006",

language = "English",

volume = "398",

pages = "18--22",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

AU - Särkijärvi, Suvi

AU - Sintonen, Sakari

AU - Tuomisto, Filip

AU - Bosund, Markus

AU - Suihkonen, Sami

AU - Lipsanen, Harri

PY - 2014/7/15

Y1 - 2014/7/15

KW - ALD

KW - positron

KW - vacancy

KW - ZnO

U2 - 10.1016/j.jcrysgro.2014.04.006

DO - 10.1016/j.jcrysgro.2014.04.006

M3 - Article

SN - 0022-0248

VL - 398

SP - 18

EP - 22

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -