Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto, J. Sandman, J. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.
Original languageEnglish
Title of host publication1998 International Conference on Indium Phosphide and Related Materials
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages549-551
DOIs
Publication statusPublished - 1998
MoE publication typeA4 Article in a conference publication
Event10th International Conference on Indium Phosphide and Related Materials, IPRM 1998 - Tsukuba, Japan
Duration: 11 May 199815 May 1998

Conference

Conference10th International Conference on Indium Phosphide and Related Materials, IPRM 1998
CountryJapan
CityTsukuba
Period11/05/9815/05/98

Fingerprint

passivity
quantum wells
carrier lifetime
blue shift
luminescence
photoluminescence
life (durability)
vacuum

Keywords

  • quantum wells

Cite this

Lipsanen, H., Sopanen, M., Ahopelto, J., Sandman, J., & Feldman, J. (1998). Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. In 1998 International Conference on Indium Phosphide and Related Materials (pp. 549-551). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ICIPRM.1998.712601
Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni ; Sandman, J. ; Feldman, J. / Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. 1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , 1998. pp. 549-551
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abstract = "Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.",
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booktitle = "1998 International Conference on Indium Phosphide and Related Materials",
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Lipsanen, H, Sopanen, M, Ahopelto, J, Sandman, J & Feldman, J 1998, Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. in 1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , pp. 549-551, 10th International Conference on Indium Phosphide and Related Materials, IPRM 1998, Tsukuba, Japan, 11/05/98. https://doi.org/10.1109/ICIPRM.1998.712601

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandman, J.; Feldman, J.

1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers , 1998. p. 549-551.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

AU - Sandman, J.

AU - Feldman, J.

PY - 1998

Y1 - 1998

N2 - Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.

AB - Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.

KW - quantum wells

U2 - 10.1109/ICIPRM.1998.712601

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Lipsanen H, Sopanen M, Ahopelto J, Sandman J, Feldman J. Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. In 1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers . 1998. p. 549-551 https://doi.org/10.1109/ICIPRM.1998.712601