Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Harri Lipsanen; Markku Sopanen; Jouni Ahopelto; J. Sandman; J. Feldman

doi:10.1109/ICIPRM.1998.712601

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Harri Lipsanen
, Markku Sopanen
, Jouni Ahopelto
, J. Sandman
, J. Feldman

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.

Original language	English
Title of host publication	1998 International Conference on Indium Phosphide and Related Materials
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	549-551
DOIs	https://doi.org/10.1109/ICIPRM.1998.712601
Publication status	Published - 1998
MoE publication type	A4 Article in a conference publication
Event	10th International Conference on Indium Phosphide and Related Materials, IPRM 1998 - Tsukuba, Japan Duration: 11 May 1998 → 15 May 1998

Conference

Conference	10th International Conference on Indium Phosphide and Related Materials, IPRM 1998
Country/Territory	Japan
City	Tsukuba
Period	11/05/98 → 15/05/98

Keywords

quantum wells

Access to Document

10.1109/ICIPRM.1998.712601

Cite this

@inproceedings{6cea9023ac734e7b8fb1a03f911d99dd,

title = "Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells",

abstract = "Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.",

keywords = "quantum wells",

author = "Harri Lipsanen and Markku Sopanen and Jouni Ahopelto and J. Sandman and J. Feldman",

year = "1998",

doi = "10.1109/ICIPRM.1998.712601",

language = "English",

pages = "549--551",

booktitle = "1998 International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "10th International Conference on Indium Phosphide and Related Materials, IPRM 1998 ; Conference date: 11-05-1998 Through 15-05-1998",

}

Lipsanen, H, Sopanen, M, Ahopelto, J, Sandman, J & Feldman, J 1998, Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. in 1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, pp. 549-551, 10th International Conference on Indium Phosphide and Related Materials, IPRM 1998, Tsukuba, Japan, 11/05/98. https://doi.org/10.1109/ICIPRM.1998.712601

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni et al.
1998 International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, 1998. p. 549-551.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

AU - Sandman, J.

AU - Feldman, J.

PY - 1998

Y1 - 1998

N2 - Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.

AB - Carrier recombination in surface and near-surface In/sub x/Ga/sub 1-x/As/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield dramatically enhanced luminescence intensity. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3 nm thick In/sub 0.25/Ga/sub 0.75/As/GaAs surface QW. The carrier recombination dynamics was studied for 7 nm thick In/sub 0.10/Ga/sub 0.90/As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively. The results indicate that the passivation reduces the surface recombination remarkably.

KW - quantum wells

U2 - 10.1109/ICIPRM.1998.712601

DO - 10.1109/ICIPRM.1998.712601

M3 - Conference article in proceedings

SP - 549

EP - 551

BT - 1998 International Conference on Indium Phosphide and Related Materials

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 10th International Conference on Indium Phosphide and Related Materials, IPRM 1998

Y2 - 11 May 1998 through 15 May 1998

ER -

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Abstract

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Keywords

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