Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto, J. Sandmann, J. Feldmann

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.
    Original languageEnglish
    Pages (from-to)1133-1134
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume38
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Passivation
    Semiconductor quantum wells
    passivity
    quantum wells
    Photoluminescence spectroscopy
    Carrier lifetime
    carrier lifetime
    blue shift
    Luminescence
    Vacuum
    luminescence
    photoluminescence
    life (durability)
    vacuum

    Keywords

    • quantum wells

    Cite this

    Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni ; Sandmann, J. ; Feldmann, J. / Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38. pp. 1133-1134.
    @article{b8df64387b3b4d9e94b67ce7b776c7f5,
    title = "Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells",
    abstract = "Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.",
    keywords = "quantum wells",
    author = "Harri Lipsanen and Markku Sopanen and Jouni Ahopelto and J. Sandmann and J. Feldmann",
    year = "1999",
    doi = "10.1143/JJAP.38.1133",
    language = "English",
    volume = "38",
    pages = "1133--1134",
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    Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandmann, J.; Feldmann, J.

    In: Japanese Journal of Applied Physics, Vol. 38, 1999, p. 1133-1134.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    AU - Sandmann, J.

    AU - Feldmann, J.

    PY - 1999

    Y1 - 1999

    N2 - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

    AB - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

    KW - quantum wells

    U2 - 10.1143/JJAP.38.1133

    DO - 10.1143/JJAP.38.1133

    M3 - Article

    VL - 38

    SP - 1133

    EP - 1134

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    ER -