Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto, J. Sandmann, J. Feldmann

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.
Original languageEnglish
Pages (from-to)1133-1134
Number of pages2
JournalJapanese Journal of Applied Physics
Volume38
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Passivation
Semiconductor quantum wells
passivity
quantum wells
Photoluminescence spectroscopy
Carrier lifetime
carrier lifetime
blue shift
Luminescence
Vacuum
luminescence
photoluminescence
life (durability)
vacuum

Keywords

  • quantum wells

Cite this

Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni ; Sandmann, J. ; Feldmann, J. / Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38. pp. 1133-1134.
@article{b8df64387b3b4d9e94b67ce7b776c7f5,
title = "Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells",
abstract = "Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.",
keywords = "quantum wells",
author = "Harri Lipsanen and Markku Sopanen and Jouni Ahopelto and J. Sandmann and J. Feldmann",
year = "1999",
doi = "10.1143/JJAP.38.1133",
language = "English",
volume = "38",
pages = "1133--1134",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",

}

Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells. / Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandmann, J.; Feldmann, J.

In: Japanese Journal of Applied Physics, Vol. 38, 1999, p. 1133-1134.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

AU - Sandmann, J.

AU - Feldmann, J.

PY - 1999

Y1 - 1999

N2 - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

AB - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

KW - quantum wells

U2 - 10.1143/JJAP.38.1133

DO - 10.1143/JJAP.38.1133

M3 - Article

VL - 38

SP - 1133

EP - 1134

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

ER -