Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto, J. Sandmann, J. Feldmann

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    Abstract

    Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.
    Original languageEnglish
    Pages (from-to)1133-1134
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume38
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • quantum wells

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