Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Harri Lipsanen; Markku Sopanen; Jouni Ahopelto; J. Sandmann; J. Feldmann

doi:10.1143/JJAP.38.1133

Effect of InP passivation on carrier recombination in In_xGa_l-xAs/GaAs surface quantum wells

Harri Lipsanen, Markku Sopanen, Jouni Ahopelto, J. Sandmann, J. Feldmann

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

Carrier recombination in surface and near-surface In_xGa_1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In_0.25Ga_0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In_0.25Ga_0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In_0.10Ga_0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

Original language	English
Pages (from-to)	1133-1134
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	38
DOIs	https://doi.org/10.1143/JJAP.38.1133
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Keywords

quantum wells

Access to Document

10.1143/JJAP.38.1133

Cite this

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title = "Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells",

abstract = "Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.",

keywords = "quantum wells",

author = "Harri Lipsanen and Markku Sopanen and Jouni Ahopelto and J. Sandmann and J. Feldmann",

year = "1999",

doi = "10.1143/JJAP.38.1133",

language = "English",

volume = "38",

pages = "1133--1134",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

AU - Sandmann, J.

AU - Feldmann, J.

PY - 1999

Y1 - 1999

N2 - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

AB - Carrier recombination in surface and near-surface InxGa1-xAs/GaAs quantum wells was studied using time-resolved and cw photoluminescence spectroscopy. Surface passivation by an ultrathin layer (1 ML) of InP was found to yield a dramatically enhanced luminescence intensity. A series of passivated In0.25Ga0.75As/GaAs surface quantum wells having a well thickness of 2 to 15 nm was grown. A blue shift due to the vacuum barrier on the surface was measured to be as high as 70 meV for a passivated 3-nm-thick In0.25Ga0.75As/GaAs surface QW. The carrier recombination dynamics was studied for 7-nm-thick In0.10Ga0.90As/GaAs surface and near-surface QWs. A carrier lifetime of 40 ps was obtained for an unpassivated near-surface QW whereas lifetimes of 300 ps and 245 ps were measured for passivated near-surface and surface QWs, respectively.

KW - quantum wells

U2 - 10.1143/JJAP.38.1133

DO - 10.1143/JJAP.38.1133

M3 - Article

SN - 0021-4922

VL - 38

SP - 1133

EP - 1134

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -