Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors

Kaj Grahn, Zheng Xia, Pekka Kuivalainen, Magnus Karlsteen, Magnus Willander

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

An optimum profile for Ge ion implantation in SiGe/Si heterojunction bipolar transistors is determined by using a twodimensional simulator code for advanced semiconductor devices. The simulation code is based on a two-dimensional drift-diffusion model for heterostructure degenerate semiconductors with nonparabolicity included in the energy band structure. The model allows accurate simulations of carrier transport in short base devices. The simulation results indicate that for high current gain the Ge profile maximum must be close to the base-collector junction, and that the unavoidable tail of the implanted germanium in the collector region does not deteriorate the gain.

Original languageEnglish
Pages (from-to)1621 - 1623
Number of pages3
JournalElectronics Letters
Volume29
Issue number18
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Heterojunction bipolar transistors
Germanium
Band structure
Carrier transport
Ions
Semiconductor devices
Ion implantation
Heterojunctions
Simulators
Semiconductor materials

Cite this

Grahn, Kaj ; Xia, Zheng ; Kuivalainen, Pekka ; Karlsteen, Magnus ; Willander, Magnus. / Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors. In: Electronics Letters. 1993 ; Vol. 29, No. 18. pp. 1621 - 1623.
@article{a7264687cc124825b84f8af75bf91c8e,
title = "Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors",
abstract = "An optimum profile for Ge ion implantation in SiGe/Si heterojunction bipolar transistors is determined by using a twodimensional simulator code for advanced semiconductor devices. The simulation code is based on a two-dimensional drift-diffusion model for heterostructure degenerate semiconductors with nonparabolicity included in the energy band structure. The model allows accurate simulations of carrier transport in short base devices. The simulation results indicate that for high current gain the Ge profile maximum must be close to the base-collector junction, and that the unavoidable tail of the implanted germanium in the collector region does not deteriorate the gain.",
author = "Kaj Grahn and Zheng Xia and Pekka Kuivalainen and Magnus Karlsteen and Magnus Willander",
year = "1993",
doi = "10.1049/el:19931080",
language = "English",
volume = "29",
pages = "1621 -- 1623",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology IET",
number = "18",

}

Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors. / Grahn, Kaj; Xia, Zheng; Kuivalainen, Pekka; Karlsteen, Magnus; Willander, Magnus.

In: Electronics Letters, Vol. 29, No. 18, 1993, p. 1621 - 1623.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors

AU - Grahn, Kaj

AU - Xia, Zheng

AU - Kuivalainen, Pekka

AU - Karlsteen, Magnus

AU - Willander, Magnus

PY - 1993

Y1 - 1993

N2 - An optimum profile for Ge ion implantation in SiGe/Si heterojunction bipolar transistors is determined by using a twodimensional simulator code for advanced semiconductor devices. The simulation code is based on a two-dimensional drift-diffusion model for heterostructure degenerate semiconductors with nonparabolicity included in the energy band structure. The model allows accurate simulations of carrier transport in short base devices. The simulation results indicate that for high current gain the Ge profile maximum must be close to the base-collector junction, and that the unavoidable tail of the implanted germanium in the collector region does not deteriorate the gain.

AB - An optimum profile for Ge ion implantation in SiGe/Si heterojunction bipolar transistors is determined by using a twodimensional simulator code for advanced semiconductor devices. The simulation code is based on a two-dimensional drift-diffusion model for heterostructure degenerate semiconductors with nonparabolicity included in the energy band structure. The model allows accurate simulations of carrier transport in short base devices. The simulation results indicate that for high current gain the Ge profile maximum must be close to the base-collector junction, and that the unavoidable tail of the implanted germanium in the collector region does not deteriorate the gain.

U2 - 10.1049/el:19931080

DO - 10.1049/el:19931080

M3 - Article

VL - 29

SP - 1621

EP - 1623

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -