Effect of ion implanted germanium profile on the characteristics of Si1−xGex/Si heterojunction bipolar transistors

Kaj Grahn, Zheng Xia, Pekka Kuivalainen, Magnus Karlsteen, Magnus Willander

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)


An optimum profile for Ge ion implantation in SiGe/Si heterojunction bipolar transistors is determined by using a twodimensional simulator code for advanced semiconductor devices. The simulation code is based on a two-dimensional drift-diffusion model for heterostructure degenerate semiconductors with nonparabolicity included in the energy band structure. The model allows accurate simulations of carrier transport in short base devices. The simulation results indicate that for high current gain the Ge profile maximum must be close to the base-collector junction, and that the unavoidable tail of the implanted germanium in the collector region does not deteriorate the gain.

Original languageEnglish
Pages (from-to)1621-1623
JournalElectronics Letters
Issue number18
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed


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