Abstract
In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180 ms) was significantly reduced to 80 ms by the NH3 plasma-treatment for 180 s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180 s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.
Original language | English |
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Pages (from-to) | 69-75 |
Journal | Thin Solid Films |
Volume | 642 |
DOIs | |
Publication status | Published - 30 Nov 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- AlGaN/GaN HEMT
- NH plasma treatment
- Transient characteristics
- UV detector
- ZnO nanorods