Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors

Salahuddin Dogar; Waqar Khan; Fasihullah Khan; Sam Dong Kim

doi:10.1016/j.tsf.2017.09.022

Effect of NH₃ plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors

Salahuddin Dogar, Waqar Khan, Fasihullah Khan, Sam Dong Kim^*

^*Corresponding author for this work

Not published at VTT

Dongguk University

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

In this work, we examine the effect of NH₃ plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180 ms) was significantly reduced to 80 ms by the NH₃ plasma-treatment for 180 s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180 s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.

Original language	English
Pages (from-to)	69-75
Journal	Thin Solid Films
Volume	642
DOIs	https://doi.org/10.1016/j.tsf.2017.09.022
Publication status	Published - 30 Nov 2017
MoE publication type	A1 Journal article-refereed

Funding

This work (project no. 2016006533 ) was supported by Mid-career Researcher Program through National Research Foundation grant funded by the Korean goverment (MISP) .

Keywords

AlGaN/GaN HEMT
NH plasma treatment
Transient characteristics
UV detector
ZnO nanorods

Access to Document

10.1016/j.tsf.2017.09.022

Cite this

@article{84d02ad8be8a4dd2b7b5abedd0308dcc,

title = "Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors",

abstract = "In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180 ms) was significantly reduced to 80 ms by the NH3 plasma-treatment for 180 s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180 s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.",

keywords = "AlGaN/GaN HEMT, NH plasma treatment, Transient characteristics, UV detector, ZnO nanorods",

author = "Salahuddin Dogar and Waqar Khan and Fasihullah Khan and Kim, \{Sam Dong\}",

note = "Funding Information: This work (project no. 2016006533 ) was supported by Mid-career Researcher Program through National Research Foundation grant funded by the Korean goverment (MISP) . Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = nov,

day = "30",

doi = "10.1016/j.tsf.2017.09.022",

language = "English",

volume = "642",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors

AU - Dogar, Salahuddin

AU - Khan, Waqar

AU - Khan, Fasihullah

AU - Kim, Sam Dong

N1 - Funding Information: This work (project no. 2016006533 ) was supported by Mid-career Researcher Program through National Research Foundation grant funded by the Korean goverment (MISP) . Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/11/30

Y1 - 2017/11/30

N2 - In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180 ms) was significantly reduced to 80 ms by the NH3 plasma-treatment for 180 s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180 s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.

AB - In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180 ms) was significantly reduced to 80 ms by the NH3 plasma-treatment for 180 s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180 s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.

KW - AlGaN/GaN HEMT

KW - NH plasma treatment

KW - Transient characteristics

KW - UV detector

KW - ZnO nanorods

UR - https://www.scopus.com/pages/publications/85029545831

U2 - 10.1016/j.tsf.2017.09.022

DO - 10.1016/j.tsf.2017.09.022

M3 - Article

AN - SCOPUS:85029545831

SN - 0040-6090

VL - 642

SP - 69

EP - 75

JO - Thin Solid Films

JF - Thin Solid Films

ER -