Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

Tomi Laurila (Corresponding Author), Kejun Zeng, Jyrki Molarius, Tommi Riekkinen, Ilkka Suni, Jorma K. Kivilahti

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Abstract

The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS).
The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.
Original languageEnglish
Pages (from-to)279-287
JournalMicroelectronic Engineering
Volume64
Issue number1-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Keywords

  • phase diagrams
  • diffusion barriers
  • copper metallisation
  • tantalum
  • tantalum carbide

Cite this

Laurila, T., Zeng, K., Molarius, J., Riekkinen, T., Suni, I., & Kivilahti, J. K. (2002). Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems. Microelectronic Engineering, 64(1-4), 279-287. https://doi.org/10.1016/S0167-9317(02)00800-6