Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

Tomi Laurila; Kejun Zeng; Jyrki Molarius; Tommi Riekkinen; Ilkka Suni; Jorma K. Kivilahti

doi:10.1016/S0167-9317(02)00800-6

Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

Tomi Laurila (Corresponding Author), Kejun Zeng, Jyrki Molarius, Tommi Riekkinen, Ilkka Suni, Jorma K. Kivilahti

VTT Technical Research Centre of Finland

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS).
The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

Original language	English
Pages (from-to)	279-287
Journal	Microelectronic Engineering
Volume	64
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(02)00800-6
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

phase diagrams
diffusion barriers
copper metallisation
tantalum
tantalum carbide

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10.1016/S0167-9317(02)00800-6

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title = "Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems",

abstract = "The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.",

keywords = "phase diagrams, diffusion barriers, copper metallisation, tantalum, tantalum carbide",

author = "Tomi Laurila and Kejun Zeng and Jyrki Molarius and Tommi Riekkinen and Ilkka Suni and Kivilahti, {Jorma K.}",

year = "2002",

doi = "10.1016/S0167-9317(02)00800-6",

language = "English",

volume = "64",

pages = "279--287",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

AU - Laurila, Tomi

AU - Zeng, Kejun

AU - Molarius, Jyrki

AU - Riekkinen, Tommi

AU - Suni, Ilkka

AU - Kivilahti, Jorma K.

PY - 2002

Y1 - 2002

N2 - The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

AB - The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

KW - phase diagrams

KW - diffusion barriers

KW - copper metallisation

KW - tantalum

KW - tantalum carbide

U2 - 10.1016/S0167-9317(02)00800-6

DO - 10.1016/S0167-9317(02)00800-6

M3 - Article

SN - 0167-9317

VL - 64

SP - 279

EP - 287

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

Abstract

Keywords

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