Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

Tomi Laurila (Corresponding Author), Kejun Zeng, Jyrki Molarius, Tommi Riekkinen, Ilkka Suni, Jorma K. Kivilahti

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS).
The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.
Original languageEnglish
Pages (from-to)279-287
JournalMicroelectronic Engineering
Volume64
Issue number1-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Phase diagrams
phase diagrams
Tantalum oxides
Oxygen
tantalum oxides
oxygen
Secondary ion mass spectrometry
Metallizing
secondary ion mass spectrometry
Transmission electron microscopy
transmission electron microscopy
Kinetics
kinetics
tantalum oxide

Keywords

  • phase diagrams
  • diffusion barriers
  • copper metallisation
  • tantalum
  • tantalum carbide

Cite this

Laurila, T., Zeng, K., Molarius, J., Riekkinen, T., Suni, I., & Kivilahti, J. K. (2002). Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems. Microelectronic Engineering, 64(1-4), 279-287. https://doi.org/10.1016/S0167-9317(02)00800-6
Laurila, Tomi ; Zeng, Kejun ; Molarius, Jyrki ; Riekkinen, Tommi ; Suni, Ilkka ; Kivilahti, Jorma K. / Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems. In: Microelectronic Engineering. 2002 ; Vol. 64, No. 1-4. pp. 279-287.
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abstract = "The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.",
keywords = "phase diagrams, diffusion barriers, copper metallisation, tantalum, tantalum carbide",
author = "Tomi Laurila and Kejun Zeng and Jyrki Molarius and Tommi Riekkinen and Ilkka Suni and Kivilahti, {Jorma K.}",
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Laurila, T, Zeng, K, Molarius, J, Riekkinen, T, Suni, I & Kivilahti, JK 2002, 'Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems', Microelectronic Engineering, vol. 64, no. 1-4, pp. 279-287. https://doi.org/10.1016/S0167-9317(02)00800-6

Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems. / Laurila, Tomi (Corresponding Author); Zeng, Kejun; Molarius, Jyrki; Riekkinen, Tommi; Suni, Ilkka; Kivilahti, Jorma K.

In: Microelectronic Engineering, Vol. 64, No. 1-4, 2002, p. 279-287.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

AU - Laurila, Tomi

AU - Zeng, Kejun

AU - Molarius, Jyrki

AU - Riekkinen, Tommi

AU - Suni, Ilkka

AU - Kivilahti, Jorma K.

PY - 2002

Y1 - 2002

N2 - The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

AB - The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta/Cu and TaC/Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

KW - phase diagrams

KW - diffusion barriers

KW - copper metallisation

KW - tantalum

KW - tantalum carbide

U2 - 10.1016/S0167-9317(02)00800-6

DO - 10.1016/S0167-9317(02)00800-6

M3 - Article

VL - 64

SP - 279

EP - 287

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -